SHD225609 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SHD225609
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 Vtrⓘ - Tiempo de subida: 33 nS
Cossⓘ - Capacitancia de salida: 310 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: TO-254
Búsqueda de reemplazo de MOSFET SHD225609
SHD225609 Datasheet (PDF)
shd225609.pdf
SENSITRON SHD225609SEMICONDUCTORTECHNICAL DATADATA SHEET 275, REV Formerly part number SHD2256HERMETIC POWER MOSFETN-CHANNELFEATURES: 800 Volt, 0.80 Ohm, 13A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Similar to Industry Part Type - IXTM13N80MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL
shd225601.pdf
SENSITRON SHD225601 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 909, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, 75A, 0.02 Ohm, MOSFET Isolated Hermetic Metal Package Fast intrinsic Rectifier Low RDS (on) Low package inductance-easy to drive and protect Similar Part Type - IXTM75N10 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECI
shd225603.pdf
SENSITRON SHD225603SEMICONDUCTORTECHNICAL DATADATA SHEET 825, REV. -HERMETIC POWER MOSFETN-CHANNELFEATURES: 200 Volt, 0.045 Ohm, 50A MOSFET Isolated Hermetic Metal Package Low RDS (on)MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsON-STATE DRAIN CURRENT ID25
shd225604.pdf
SENSITRON SHD225604 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 552, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 200 Volt, 0.045 Ohm, 50A MOSFET Isolated Hermetic Metal Package Low RDS (on) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ON-STATE DRA
shd225608.pdf
SHD225608SENSITRON SEMICONDUCTORTECHNICAL DATADATA SHEET 915, REV -HERMETIC POWER MOSFETN-CHANNELFEATURES: 600 Volt, 20 Amp, 0.35 Ohm MOSFET Isolated and Hermetically SealedMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 20 AmpsCONTINUOUS DRAIN CURRENT VG
shd225602.pdf
SENSITRON SHD225602SEMICONDUCTORTECHNICAL DATADATA SHEET 473, REV. -HERMETIC POWER MOSFETN-CHANNELFEATURES: 100 Volt, 75A, 0.025 Ohm, MOSFET Isolated Hermetic Metal Package Fast intrinsic Rectifier Low RDS (on) Low package inductance-easy to drive and protect Similar Part Type - IXTD75N10 MAXIMUM RATINGS ALL RATINGS ARE AT T = 25 C UNLESS OTHERWISE SPEC
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918