SHD226401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SHD226401
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 1100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
Paquete / Cubierta: TO-257
Búsqueda de reemplazo de MOSFET SHD226401
SHD226401 Datasheet (PDF)
shd226401.pdf
SENSITRON SHD226401SEMICONDUCTORTECHNICAL DATADATA SHEET 581, REV. -HERMETIC POWER MOSFETN-CHANNELFEATURES: 60 Volt, 0.035 Ohm, 20A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFY044 SeriesMAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTA
shd226403 shd226403r.pdf
SHD226403 SENSITRON SHD226403R SEMICONDUCTOR TECHNICAL DATA DATA SHEET 171, REV. B Formerly Part Number SHD2263 HERMETIC POWER MOSFET - N-CHANNEL FEATURES: 200 Volt, 0.21 Ohm, 14A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Ceramic Seals available (Add a C to the part number, i.e. SHDC226403) Similar to IRFY240
shd226409.pdf
SENSITRON SHD226409 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 582, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.21 Ohm, -13A MOSFET Isolated Hermetic Metal Package Fast Switching Equivalent to IRFY9140 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLT
shd226405.pdf
SHD226405 SENSITRON SHD226405B SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2037, REV. C HERMETIC POWER MOSFET N-CHANNEL FEATURES: 500 Volt, 0.85, Ohm, 7A MOSFET Isolated Hermetically Sealed MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 7 Amps
shd226408.pdf
SENSITRON SHD226408SEMICONDUCTORTECHNICAL DATADATA SHEET 472, REV -HERMETIC POWER MOSFETN-CHANNELDESCRIPTION: 1000 VOLT, 3.5 OHM MOSFET IN A HERMETIC TO-257 PACKAGE.MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 3.9 AmpsCONTINUOUS DRAIN CURRENT @ TC = 25CID
shd226404.pdf
SENSITRON SHD226404 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 213, REV. B Formerly Part Number SHD2264 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 400 Volt, 0.55 Ohm, 6.9 A MOSFET Low RDS (on) Equivalent to IRFY340 Series Add a C after SHD for ceramic eyelets MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP.
shd226402.pdf
SENSITRON SHD226402 SEMICONDUCTORTECHNICAL DATADATA SHEET 606, REV. AFormerly DS302, SHD2262HERMETIC POWER MOSFETN-CHANNELFEATURES: 100 Volt, 0.092 Ohm, 18A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFY140 Series Add Suffix C to the Part Number for Ceramic SealsMAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918