IRL2910 Datasheet. Equivalente

 ..1. Size:1541K  international rectifier
 irl2910pbf.pdf

PD - 94993 IRL2910PbF Lead-Free www.irf.com 1 2/10/04 IRL2910PbF 2 www.irf.com IRL2910PbF www.irf.com 3 IRL2910PbF 4 www.irf.com IRL2910PbF www.irf.com 5 IRL2910PbF 6 www.irf.com IRL2910PbF www.irf.com 7 IRL2910PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13

 ..2. Size:124K  international rectifier
 irl2910.pdf

PD - 91375B IRL2910 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.026 175 C Operating Temperature G Fast Switching ID = 55A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem

 ..3. Size:801K  cn vbsemi
 irl2910pbf.pdf

IRL2910PBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.018 at VGS = 10 V 100 70a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G G D S S Top View N-Channel MOSFET ABSOLUTE

 ..4. Size:244K  inchange semiconductor
 irl2910.pdf

isc N-Channel MOSFET Transistor IRL2910 IIRL2910 FEATURES Static drain-source on-resistance RDS(on) 0.026 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 0.1. Size:684K  international rectifier
 irl2910spbf irl2910lpbf.pdf

PD - 95149 IRL2910S/LPbF HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.026 Fast Switching G Fully Avalanche Rated ID = 55A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ext

 0.2. Size:146K  international rectifier
 irl2910n.pdf

PD 9.1375 IRL2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.026 175 C Operating Temperature Fast Switching ID = 48A Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 0.3. Size:194K  international rectifier
 irl2910s irl2910l.pdf

PD - 91376B IRL2910S/L HEXFET Power MOSFET Logic-Level Gate Drive D Surface Mount VDSS = 100V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.026 Dynamic dv/dt Rating G Fast Switching Fully Avalanche Rated ID = 55A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

 0.4. Size:256K  inchange semiconductor
 irl2910l.pdf

Isc N-Channel MOSFET Transistor IRL2910L FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 0.5. Size:258K  inchange semiconductor
 irl2910s.pdf

Isc N-Channel MOSFET Transistor IRL2910S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt