IRL2910 Todos los transistores

Introduzca al menos 3 números o letras

IRL2910 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL2910

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 100 V

Corriente continua de drenaje (Id): 48 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.026 Ohm

Empaquetado / Estuche: TO220AB

Búsqueda de reemplazo de MOSFET IRL2910

 

IRL2910 Datasheet (PDF)

1.1. irl2910spbf.pdf Size:685K _international_rectifier

IRL2910
IRL2910

PD - 95149 IRL2910S/LPbF HEXFET® Power MOSFET Logic-Level Gate Drive Surface Mount D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.026Ω Fast Switching G Fully Avalanche Rated ID = 55A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ext

1.2. irl2910n.pdf Size:146K _international_rectifier

IRL2910
IRL2910

PD 9.1375 IRL2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.026? 175C Operating Temperature Fast Switching ID = 48A Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

1.3. irl2910s.pdf Size:194K _international_rectifier

IRL2910
IRL2910

PD - 91376B IRL2910S/L HEXFET Power MOSFET Logic-Level Gate Drive D Surface Mount VDSS = 100V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.026? Dynamic dv/dt Rating G Fast Switching Fully Avalanche Rated ID = 55A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

1.4. irl2910.pdf Size:124K _international_rectifier

IRL2910
IRL2910

PD - 91375B IRL2910 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.026? 175C Operating Temperature G Fast Switching ID = 55A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

Otros transistores... IRL2203N , IRL2203NL , IRL2203NS , IRL2505 , IRL2505L , IRL2505S , IRL2703 , IRL2703S , RFP50N06 , IRL2910L , IRL2910S , IRL3101D1 , IRL3102 , IRL3102S , IRL3103 , IRL3103D1 , IRL3103D1S .

 


IRL2910
  IRL2910
  IRL2910
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |

Introduzca al menos 1 números o letras