IRF7389PBF-1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7389PBF-1  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 1 V

Qgⓘ - Carga de la puerta: 22 nC

trⓘ - Tiempo de subida: 8.9 nS

Cossⓘ - Capacitancia de salida: 320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm

Encapsulados: SO-8

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IRF7389PBF-1 datasheet

 ..1. Size:258K  international rectifier
 irf7389pbf-1.pdf pdf_icon

IRF7389PBF-1

IRF7389PbF-1 HEXFET Power MOSFET N-CH P-CH N-CHANNEL MOSFET VDS 30 -30 V 1 8 S1 D1 RDS(on) max 2 7 G1 D1 0.029 0.058 (@V = 10V) GS 3 6 S2 D2 Qg (typical) 22 23 nC 4 5 G2 D2 ID 7.3 -5.3 A P-CHANNEL MOSFET SO-8 (@T = 25 C) A Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Tech

 4.1. Size:259K  international rectifier
 irf7389pbf.pdf pdf_icon

IRF7389PBF-1

PD - 95462 IRF7389PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Complimentary Half Bridge 2 7 G1 D1 VDSS 30V -30V l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free P-CHANNEL MOSFET RDS(on) 0.029 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier

 7.1. Size:165K  international rectifier
 irf7389.pdf pdf_icon

IRF7389PBF-1

PD - 91645 IRF7389 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Complimentary Half Bridge 2 7 G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.029 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier utiliz

 8.1. Size:200K  international rectifier
 irf7380qpbf.pdf pdf_icon

IRF7389PBF-1

PD - 96132B IRF7380QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance VDSS RDS(on) max ID l N Channel MOSFET 73m @VGS = 10V l Surface Mount 80V 2.2A l Available in Tape & Reel l 150 C Operating Temperature l Lead-Free 1 8 S1 D1 2 7 Description G1 D1 Additional features of These HEXFET Power 3 6 S2 D2 MOSFET's are a 150 C junction operating 4

MOSTRAR MÁS

Otros transistores... SHDC220301, IRF7353D1PBF, IRF7353D2PBF, IRF7379IPBF, IRF7379QPBF, IRF737LCPBF, IRF7380PBF-1, IRF7380QPBF, 2N7002, IRF7401PBF, IRF7401PBF-1, IRF7402PBF, IRF7403PBF, SHDC220455, SHDC224701, SHDC225456, SHDC225509