IRF7389PBF-1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7389PBF-1
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.9 nS
Cossⓘ - Capacitancia de salida: 320 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
Paquete / Cubierta: SO-8
- Selección de transistores por parámetros
IRF7389PBF-1 Datasheet (PDF)
irf7389pbf-1.pdf

IRF7389PbF-1HEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFETVDS 30 -30 V 1 8S1 D1RDS(on) max 2 7G1 D10.029 0.058 (@V = 10V)GS3 6S2 D2Qg (typical) 22 23 nC45G2 D2ID 7.3 -5.3 A P-CHANNEL MOSFETSO-8(@T = 25C)ATop ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Tech
irf7389pbf.pdf

PD - 95462IRF7389PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-Resistance S1 D1l Complimentary Half Bridge 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.029 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifier
irf7389.pdf

PD - 91645IRF7389PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8 Ultra Low On-Resistance S1 D1 Complimentary Half Bridge 2 7G1 D1VDSS 30V -30V Surface Mount3 6S2 D2 Fully Avalanche Rated45G2 D2P-CHANNEL MOSFETRDS(on) 0.029 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutiliz
irf7380qpbf.pdf

PD - 96132BIRF7380QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceVDSS RDS(on) max IDl N Channel MOSFET73m @VGS = 10Vl Surface Mount 80V 2.2Al Available in Tape & Reell 150C Operating Temperaturel Lead-Free1 8S1 D12 7Description G1 D1Additional features of These HEXFET Power3 6S2 D2MOSFET's are a 150C junction operating4
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AP98T03GP-HF | CSD85312Q3E | FTK5N80DD | BUK7616-55A
History: AP98T03GP-HF | CSD85312Q3E | FTK5N80DD | BUK7616-55A



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
2sb560 replacement | 2sd330 replacement | a1273 transistor | 2sc1384 equivalent | 2sd786 | a940 transistor | 2sc1815 replacement | 2sc2383