IRL3103D1S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL3103D1S 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 89 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 64 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 210 nS
Cossⓘ - Capacitancia de salida: 810 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Encapsulados: TO263
📄📄 Copiar
Búsqueda de reemplazo de IRL3103D1S MOSFET
- Selecciónⓘ de transistores por parámetros
IRL3103D1S datasheet
irl3103d1s.pdf
PD- 9.1558A IRL3103D1S FETKYTM MOSFET & SCHOTTKY RECTIFIER Co-packaged HEXFET Power MOSFET D and Schottky Diode VDSS = 30V Generation 5 Technology Logic Level Gate Drive RDS(on) = 0.014 Minimize Circuit Inductance G Ideal For Synchronous Regulator Application ID = 64A S Description The FETKY family of co-packaged HEXFET power MOSFETs and Schottky Diodes offer the desi
irl3103d1.pdf
PD 9.1608C IRL3103D1 FETKYTM MOSFET & SCHOTTKY RECTIFIER Copackaged HEXFET Power MOSFET D and Schottky Diode VDSS = 30V Generation 5 Technology Logic Level Gate Drive RDS(on) = 0.014 Minimize Circuit Inductance G Ideal For Synchronous Regulator Application ID = 64A S Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer
irl3103d2.pdf
PD 9.1660 IRL3103D2 PRELIMINARY FETKYTM MOSFET & SCHOTTKY RECTIFIER D Copackaged HEXFET Power MOSFET and Schottky Diode VDSS = 30V Generation 5 Technology Logic Level Gate Drive RDS(on) = 0.014 Minimize Circuit Inductance G Ideal For Synchronous Regulator Application ID = 54A S Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer
irl3103d2pbf.pdf
PD-95435 IRL3103D2PbF FETKYTM MOSFET & SCHOTTKY RECTIFIER l Copackaged HEXFET Power MOSFET D and Schottky Diode VDSS = 30V l Generation 5 Technology l Logic Level Gate Drive RDS(on) = 0.014 l Minimize Circuit Inductance G l Ideal For Synchronous Regulator Application ID = 54A l Lead-Free S Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes
Otros transistores... IRL2910, IRL2910L, IRL2910S, IRL3101D1, IRL3102, IRL3102S, IRL3103, IRL3103D1, IRFP250N, IRL3103D2, IRL3103L, IRL3103S, IRL3202, IRL3202S, IRL3215, IRL3302, IRL3302S
Parámetros del MOSFET. Cómo se afectan entre sí.
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BC3134KT | BC3134K | BC2302W | BC2302T-2.8A | BC2302-2.8A | BC2301W | BC2301T-2.8A | CB3139KTB | CB2301DW | BC8205 | BC3415 | BC3407 | BC3401 | BC3400 | BC2301 | BC1012W
Popular searches
d313 transistor equivalent | 2sb827 | c5200 datasheet | 2n2614 | 2sa777 replacement | 2sc828 transistor | 2sd357 | 110n8f6 mosfet datasheet
