SIA447DJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIA447DJ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.85 V
   Qgⓘ - Carga de la puerta: 52 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 590 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
   Paquete / Cubierta: SC-70-6L

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SIA447DJ Datasheet (PDF)

..1. Size:226K vishay
sia447dj.pdf

New ProductSiA447DJVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package- Small Footprint Area0.0135 at VGS = - 4.5 V - 12a- Low On-Resistance0.0194 at VGS = - 2.5 V - 12a- 12 31 nC 100 % Rg Tested0.0344 at VGS = - 1.8 V - 12a

9.1. Size:219K vishay
sia449dj.pdf

New ProductSiA449DJVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package- Small Footprint Area0.020 at VGS = - 10 V - 12a- Low On-Resistance- 30 0.024 at VGS = - 4.5 V - 12a 23.1 nC 100 % Rg Tested0.038 at VGS = - 2.5 V - 12a

9.2. Size:199K vishay
sia444djt.pdf

New ProductSiA444DJTVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.017 at VGS = 10 V 12 TrenchFET Power MOSFET30 5 nC New Thermally Enhanced PowerPAK0.022 at VGS = 4.5 V 12SC-70 Package- Small Footprint AreaThin PowerPAK SC-70-6L-Single-

9.3. Size:228K vishay
sia445edj.pdf

New ProductSiA445EDJVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0165 at VGS = - 4.5 V - 12a Thermally Enhanced PowerPAK0.0185 at VGS = - 3.7 V - 20- 12a 23 nCSC-70 Package0.0300 at VGS = - 2.5 V - Small

9.4. Size:258K vishay
sia446dj.pdf

SiA446DJwww.vishay.comVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET technology optimizes balanceVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.)of RDS(on), Qg, Qsw and Qoss0.177 at VGS = 10 V 7.7 100 % Rg and UIS tested150 0.185 at VGS = 7.5 V 7.6 4.3 nC Material categorization:0.250 at VGS = 6 V 4For definitions of compliance

9.5. Size:332K vishay
sia445edjt.pdf

SiA445EDJTwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package0.0167 at VGS = -4.5 V -12 a- Small footprint area-20 0.0185 at VGS = -3.7 V -12 a 22 nC- Low on-resistance0.0310 at VGS = -2.5 V -12 a Ultra-thin 0.6 m

9.6. Size:190K vishay
sia443dj.pdf

New ProductSiA443DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ) TrenchFET Power MOSFET0.045 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAK RoHS0.063 at VGS = - 2.5 V - 20- 9a 9 nC COMPLIANTSC-70 Package0.088 at VGS = - 1.8 V - Small Footprint Area- 9a- Low On-Resis

9.7. Size:230K vishay
sia440dj.pdf

SiA440DJVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.026 at VGS = 10 V Material categorization:12For definitions of compliance please see0.028 at VGS = 4.5 V 1240 6.9 nCwww.vishay.com/doc?999120.029 at VGS = 3.7 V 120.035 at VGS =

9.8. Size:204K vishay
sia441dj.pdf

SiA441DJVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.047 at VGS = - 10 V - 12a Thermally Enhanced PowerPAK- 40 11 nC0.065 at VGS = - 4.5 V SC-70 Package- 12a- Small Footprint Area- Low On-ResistancePowerPAK SC-70

9.9. Size:224K vishay
sia448dj.pdf

New ProductSiA448DJVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.0150 at VGS = 4.5 V 12- Small Footprint Area0.0166 at VGS = 2.5 V 12- Low On-Resistance20 13 nC0.0200 at VGS = 1.8 V 12 100 % Rg Tested0.0324

9.10. Size:1426K cn vbsemi
sia444djt.pdf

SiA444DJTwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK SC-70-6L

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