IRL3103D2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD 9.1660IRL3103D2PRELIMINARYFETKYTM MOSFET & SCHOTTKY RECTIFIERD Copackaged HEXFET Power MOSFETand Schottky DiodeVDSS = 30V Generation 5 Technology Logic Level Gate DriveRDS(on) = 0.014 Minimize Circuit InductanceG Ideal For Synchronous Regulator ApplicationID = 54ASDescriptionThe FETKY family of copackaged HEXFET powerMOSFETs and Schottky Diodes offer

PD-95435IRL3103D2PbFFETKYTM MOSFET & SCHOTTKY RECTIFIERl Copackaged HEXFET Power MOSFET Dand Schottky DiodeVDSS = 30Vl Generation 5 Technologyl Logic Level Gate DriveRDS(on) = 0.014l Minimize Circuit InductanceGl Ideal For Synchronous Regulator ApplicationID = 54Al Lead-FreeSDescriptionThe FETKY family of copackaged HEXFET powerMOSFETs and Schottky Diodes

PD- 9.1558AIRL3103D1SFETKYTM MOSFET & SCHOTTKY RECTIFIER Co-packaged HEXFET Power MOSFETDand Schottky DiodeVDSS = 30V Generation 5 Technology Logic Level Gate DriveRDS(on) = 0.014 Minimize Circuit InductanceG Ideal For Synchronous Regulator ApplicationID = 64ASDescriptionThe FETKY family of co-packaged HEXFET powerMOSFETs and Schottky Diodes offer the desi

PD 9.1608CIRL3103D1FETKYTM MOSFET & SCHOTTKY RECTIFIER Copackaged HEXFET Power MOSFET Dand Schottky DiodeVDSS = 30V Generation 5 Technology Logic Level Gate DriveRDS(on) = 0.014 Minimize Circuit InductanceG Ideal For Synchronous Regulator ApplicationID = 64ASDescriptionThe FETKY family of copackaged HEXFET powerMOSFETs and Schottky Diodes offer the designer

PD - 94994IRL3103PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 12ml Fast SwitchingGl Fully Avalanche RatedID = 64Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely

PD - 91337IRL3103HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12m Fast SwitchingG Fully Avalanche RatedID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance

PD - 94162IRL3103SIRL3103L Advanced Process Technology Surface Mount (IRL3103S)HEXFET Power MOSFET Low-profile through-hole (IRL3103L)D 175C Operating TemperatureVDSS = 30V Fast Switching Fully Avalanche RatedRDS(on) = 12mDescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toID = 64Aachieve ext

PD - 95150IRL3103SPbFIRL3103LPbF Advanced Process Technology Surface Mount (IRL3103S)HEXFET Power MOSFET Low-profile through-hole (IRL3103L) 175C Operating Temperature DVDSS = 30V Fast Switching Fully Avalanche RatedRDS(on) = 12m Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from InternationalID = 64ARectifier utilize advanced processing technique

isc N-Channel MOSFET Transistor IRL3103SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

isc N-Channel MOSFET Transistor IRL3103IIRL3103FEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extrem

isc N-Channel MOSFET Transistor IRL3103SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS