IRL3103D2 Todos los transistores

PD 9.1660 IRL3103D2 PRELIMINARY FETKYTM MOSFET & SCHOTTKY RECTIFIER D Copackaged HEXFET Power MOSFET and Schottky Diode VDSS = 30V Generation 5 Technology Logic Level Gate Drive RDS(on) = 0.014 Minimize Circuit Inductance G Ideal For Synchronous Regulator Application ID = 54A S Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer

PD-95435 IRL3103D2PbF FETKYTM MOSFET & SCHOTTKY RECTIFIER l Copackaged HEXFET Power MOSFET D and Schottky Diode VDSS = 30V l Generation 5 Technology l Logic Level Gate Drive RDS(on) = 0.014 l Minimize Circuit Inductance G l Ideal For Synchronous Regulator Application ID = 54A l Lead-Free S Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes

PD- 9.1558A IRL3103D1S FETKYTM MOSFET & SCHOTTKY RECTIFIER Co-packaged HEXFET Power MOSFET D and Schottky Diode VDSS = 30V Generation 5 Technology Logic Level Gate Drive RDS(on) = 0.014 Minimize Circuit Inductance G Ideal For Synchronous Regulator Application ID = 64A S Description The FETKY family of co-packaged HEXFET power MOSFETs and Schottky Diodes offer the desi

PD 9.1608C IRL3103D1 FETKYTM MOSFET & SCHOTTKY RECTIFIER Copackaged HEXFET Power MOSFET D and Schottky Diode VDSS = 30V Generation 5 Technology Logic Level Gate Drive RDS(on) = 0.014 Minimize Circuit Inductance G Ideal For Synchronous Regulator Application ID = 64A S Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer

PD - 94994 IRL3103PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 12m l Fast Switching G l Fully Avalanche Rated ID = 64A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

PD - 91337 IRL3103 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 30V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 12m Fast Switching G Fully Avalanche Rated ID = 64A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

PD - 94162 IRL3103S IRL3103L Advanced Process Technology Surface Mount (IRL3103S) HEXFET Power MOSFET Low-profile through-hole (IRL3103L) D 175 C Operating Temperature VDSS = 30V Fast Switching Fully Avalanche Rated RDS(on) = 12m Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ID = 64A achieve ext

PD - 95150 IRL3103SPbF IRL3103LPbF Advanced Process Technology Surface Mount (IRL3103S) HEXFET Power MOSFET Low-profile through-hole (IRL3103L) 175 C Operating Temperature D VDSS = 30V Fast Switching Fully Avalanche Rated RDS(on) = 12m Lead-Free G Description Advanced HEXFET Power MOSFETs from International ID = 64A Rectifier utilize advanced processing technique

isc N-Channel MOSFET Transistor IRL3103S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

isc N-Channel MOSFET Transistor IRL3103 IIRL3103 FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extrem

isc N-Channel MOSFET Transistor IRL3103S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S