SIA915DJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIA915DJ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 6 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.087 Ohm
   Paquete / Cubierta: SC-70-6

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SIA915DJ Datasheet (PDF)

..1. Size:195K vishay
sia915dj.pdf

New ProductSiA915DJVishay SiliconixDual P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.087 at VGS = - 10 V - 4.5a TrenchFET Power MOSFET- 30 3.2 nC0.145 at VGS = - 4.5 V New Thermally Enhanced PowerPAK- 4.5aSC-70 Package- Small Footprint Area- Low On-Re

9.1. Size:280K vishay
sia914adj.pdf

SiA914ADJwww.vishay.comVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK0.043 at VGS = 4.5 V 4.5SC-70 Package0.045 at VGS = 3.7 V 4.5- Small Footprint Area20 3.5 nC0.050 at VGS = 2.5 V 4.5- Low On-Resistance0.063 at VGS = 1.8 V 4

9.2. Size:225K vishay
sia914dj.pdf

New ProductSiA914DJVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.053 at VGS = 4.5 V 4.5 New Thermally Enhanced PowerPAKRoHSCOMPLIANTSC-70 Package0.063 at VGS = 2.5 V 20 4.5 4.1 nC- Small Footprint Area0.077 at VGS = 1.8 V 4.5- Low On-Resi

9.3. Size:192K vishay
sia913adj.pdf

New ProductSiA913ADJVishay SiliconixDual P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.061 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK0.081 at VGS = - 2.5 V - 12- 4.5a 8.2 nCSC-70 Package0.115 at VGS = - 1.8 V - Small Footprint

9.4. Size:189K vishay
sia911adj.pdf

New ProductSiA911ADJVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.116 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAKRoHS0.155 at VGS = - 2.5 V - 20- 4.5a 4.9 nCCOMPLIANTSC-70 Package0.205 at VGS = - 1.8 V - Small Footprint Area- 4.5

9.5. Size:96K vishay
sia913dj.pdf

New ProductSiA913DJVishay SiliconixDual P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.070 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAKRoHS0.100 at VGS = - 2.5 V - 12- 4.5a 5 nCCOMPLIANTSC-70 Package0.140 at VGS = - 1.8 V - Small Footprint Area- 4.5a

9.6. Size:188K vishay
sia911ad.pdf

9.7. Size:190K vishay
sia917dj.pdf

New ProductSiA917DJVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.110 at VGS = - 4.5 V - 4.5a- 20 3 nC New Thermally Enhanced PowerPAK RoHS0.185 at VGS = - 2.5 V - 4.5a COMPLIANTSC-70 Package- Small Footprint Area- Low On-ResistanceAPPLICATIONS

9.8. Size:192K vishay
sia911dj.pdf

SiA911DJVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.094 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAKRoHS0.131 at VGS = - 2.5 V - 20- 4.5a 4.9 nCCOMPLIANTSC-70 Package0.185 at VGS = - 1.8 V - Small Footprint Area- 4.5a- Low On-Re

9.9. Size:378K vishay
sia918edj.pdf

SiA918EDJwww.vishay.comVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package0.058 at VGS = 4.5 V 4.5 a- Small footprint area30 0.065 at VGS = 2.5 V 4.5 a 3.6 nC - Low on-resistance Typical ESD protection: 1000 V (HBM)0.077 at

9.10. Size:190K vishay
sia913ad.pdf

9.11. Size:271K vishay
sia910edj.pdf

SiA910EDJVishay SiliconixDual N-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Thermally Enhanced PowerPAKID (A)a Qg (Typ.)SC-70 Package0.028 at VGS = 4.5 V 4.5- Small Footprint Area12 0.033 at VGS = 2.5 V 6.2 nC4.5 - Low On-Resistance Typical ESD Protection: 2400 V0.042 at Vgs = 1.8 V 4.5 100 % R

9.12. Size:192K vishay
sia912dj.pdf

New ProductSiA912DJVishay SiliconixDual N-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.040 at VGS = 4.5 V 4.5 New Thermally Enhaced PowerPAKRoHSCOMPLIANTSC-70 Package0.048 at VGS = 2.5 V 12 4.5 4.5 nC- Small Footprint Area0.063 at VGS = 1.8 V 4.5APPLICATIONS

9.13. Size:200K vishay
sia911ed.pdf

SiA911EDJVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.101 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK0.141 at VGS = - 2.5 V - 20- 4.5a 4.9 nCSC-70 Package0.192 at VGS = - 1.8 V - 2 - Small Footpr

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