IRL3303 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL3303
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 68 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 200 nS
Cossⓘ - Capacitancia de salida: 340 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET IRL3303
IRL3303 Datasheet (PDF)
irl3303.pdf
PD - 9.1322BIRL3303HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 38ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan
irl3303pbf.pdf
PD - 94887IRL3303PbFHEXFET Power MOSFET Lead-Freewww.irf.com 112/11/03IRL3303PbF2 www.irf.comIRL3303PbFwww.irf.com 3IRL3303PbF4 www.irf.comIRL3303PbFwww.irf.com 5IRL3303PbF6 www.irf.comIRL3303PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout ConsiderationsD.U.T Low Stray Inductance Ground Plane Low Leakage Inductance
irl3303lpbf irl3303spbf.pdf
PD - 95578IRL3303LPbFIRL3303SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRL3303S)VDSS = 30Vl Low-profile through-hole (IRL3303L)l 175C Operating TemperatureRDS(on) = 0.026l Fast SwitchingGl Fully Avalanche RatedID = 38Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutili
irl3303s irl3303l.pdf
PD - 9.1323BIRL3303S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 30V Surface Mount (IRL3303S) Low-profile through-hole (IRL3303L) 175C Operating Temperature RDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 38ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques
irl3302spbf.pdf
PD- 95587IRL3302SPbFHEXFET Power MOSFETDVDSS = 20VRDS(on) = 0.020G Lead-FreeSID = 39Awww.irf.com 107/20/04IRL3302SPbF2 www.irf.comIRL3302SPbFwww.irf.com 3IRL3302SPbF4 www.irf.comIRL3302SPbFwww.irf.com 5IRL3302SPbF6 www.irf.comIRL3302SPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Induct
irl3302s.pdf
PD - 9.1692AIRL3302SPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface MountVDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC ConvertersRDS(on) = 0.020W Fast SwitchingGID = 39ASDescriptionThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters. Advanced processing techniques
irl3302.pdf
PD 9.1696AIRL3302PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Optimized for 4.5V Gate DriveVDSS = 20V Ideal for CPU Core DC-DC Converters 150C Operating TemperatureRDS(on) = 0.020W Fast SwitchingGDescriptionID = 39AThese HEXFET Power MOSFETs were designed Sspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Adv
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