SIHB10N40D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHB10N40D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 147 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 59 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO-263

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SIHB10N40D datasheet

 ..1. Size:144K  vishay
 sihb10n40d.pdf pdf_icon

SIHB10N40D

SiHB10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 - Low Input Capacitance (Ciss) Qg max. (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness Qgd (nC) 7 - Avalanche Energy Rated (UIS) Con

 9.1. Size:292K  vishay
 sihp16n50c sihb16n50c sihf16n50c.pdf pdf_icon

SIHB10N40D

SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A

 9.2. Size:200K  vishay
 sihb12n50e.pdf pdf_icon

SIHB10N40D

SiHB12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.380 Reduced switching and conduction losses Qg max. (nC) 50 Low gate charge (Qg) Qgs (nC) 6 Avalanche energy rated (UIS) Qgd (nC) 10 Materi

 9.3. Size:199K  vishay
 sihb15n60e.pdf pdf_icon

SIHB10N40D

SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced Switching and Conduction Losses Qg max. (nC) 76 Ultra Low Gate Charge (Qg) Qgs (nC) 11 Avalanche Energy Rated (UIS) Qgd (nC) 17

MOSTRAR MÁS

Otros transistores... SIE882DF, SIHA12N50E, SIHA12N60E, SIHA15N50E, SIHA15N60E, SIHA20N50E, SIHA22N60E, SIHA25N50E, STF13NM60N, SIHB12N50C, SIHB12N50E, SIHB12N60E, SIHB12N65E, SIHB15N50E, SIHB15N60E, SIHB15N65E, SIHB16N50C