SIHB12N60E Todos los transistores

 

SIHB12N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHB12N60E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 53 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO-263
 

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SIHB12N60E Datasheet (PDF)

 ..1. Size:202K  vishay
 sihb12n60e.pdf pdf_icon

SIHB12N60E

SiHB12N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced Switching and Conduction LossesQg max. (nC) 58 Ultra Low Gate Charge (Qg)Qgs (nC) 6 Avalanche Energy Rated (UIS)Qgd (nC) 13

 6.1. Size:150K  vishay
 sihb12n65e.pdf pdf_icon

SIHB12N60E

SiHB12N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesQg max. (nC) 70 Ultra low gate charge (Qg)Qgs (nC) 9 Avalanche energy rated (UIS)Qgd (nC) 16 M

 7.1. Size:200K  vishay
 sihb12n50e.pdf pdf_icon

SIHB12N60E

SiHB12N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.380 Reduced switching and conduction lossesQg max. (nC) 50 Low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 10 Materi

 7.2. Size:154K  vishay
 sihp12n50c sihb12n50c sihf12n50c.pdf pdf_icon

SIHB12N60E

SiHP12N50C, SiHB12N50C, SiHF12N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 VRDS(on) ()VGS = 10 V 0.555 100 % Avalanche TestedQg (Max.) (nC) 48 Gate Charge ImprovedQgs (nC) 12 Trr/Qrr ImprovedQgd (nC) 15Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220AB TO-220 FULLPAK

MOSTRAR MÁS

Otros transistores... SIHA15N50E , SIHA15N60E , SIHA20N50E , SIHA22N60E , SIHA25N50E , SIHB10N40D , SIHB12N50C , SIHB12N50E , K2611 , SIHB12N65E , SIHB15N50E , SIHB15N60E , SIHB15N65E , SIHB16N50C , SIHB20N50E , SIHB22N60E , SIHB22N60S .

 

 
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