SIHB15N65E Todos los transistores

 

SIHB15N65E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHB15N65E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: TO-263
 

 Búsqueda de reemplazo de SIHB15N65E MOSFET

   - Selección ⓘ de transistores por parámetros

 

SIHB15N65E Datasheet (PDF)

 ..1. Size:206K  vishay
 sihb15n65e.pdf pdf_icon

SIHB15N65E

SiHB15N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesQg max. (nC) 96 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (UIS)Qgd (nC) 21

 6.1. Size:199K  vishay
 sihb15n60e.pdf pdf_icon

SIHB15N65E

SiHB15N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced Switching and Conduction LossesQg max. (nC) 76 Ultra Low Gate Charge (Qg)Qgs (nC) 11 Avalanche Energy Rated (UIS)Qgd (nC) 17

 7.1. Size:200K  vishay
 sihb15n50e.pdf pdf_icon

SIHB15N65E

SiHB15N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.243 Reduced switching and conduction lossesQg max. (nC) 66 Low gate charge (Qg)Qgs (nC) 8 Avalanche energy rated (UIS)Qgd (nC) 14 Materi

 9.1. Size:144K  vishay
 sihb10n40d.pdf pdf_icon

SIHB15N65E

SiHB10N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.6- Low Input Capacitance (Ciss)Qg max. (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4- High Body Diode RuggednessQgd (nC) 7- Avalanche Energy Rated (UIS)Con

MOSTRAR MÁS

Otros transistores... SIHA25N50E , SIHB10N40D , SIHB12N50C , SIHB12N50E , SIHB12N60E , SIHB12N65E , SIHB15N50E , SIHB15N60E , IRF730 , SIHB16N50C , SIHB20N50E , SIHB22N60E , SIHB22N60S , SIHB22N65E , SIHB23N60E , SIHB24N65E , SIHB28N60EF .

History: 2SK2164

 

 
Back to Top

 


 
.