SIHB22N65E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHB22N65E  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 227 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 118 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO-263

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SIHB22N65E datasheet

 ..1. Size:209K  vishay
 sihb22n65e.pdf pdf_icon

SIHB22N65E

SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Qg max. (nC) 110 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Qgd (nC) 32

 6.1. Size:148K  vishay
 sihb22n60s.pdf pdf_icon

SIHB22N65E

SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY Generation One VDS at TJ max. (V) 650 Halogen-free According to IEC 61249-2-21 RDS(on) max. at 25 C ( ) VGS = 10 V 0.190 Definition Qg max. (nC) 98 High EAR Capability Qgs (nC) 17 Lower Figure-of-Merit Ron x Qg Qgd (nC) 25 100 % Avalanche Tested Configuration Single

 6.2. Size:198K  vishay
 sihb22n60e.pdf pdf_icon

SIHB22N65E

SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced Switching and Conduction Losses Qg max. (nC) 86 Ultra Low Gate Charge (Qg) Qgs (nC) 14 Avalanche Energy Rated (UIS) Qgd (nC) 26

 6.3. Size:257K  inchange semiconductor
 sihb22n60e.pdf pdf_icon

SIHB22N65E

isc N-Channel MOSFET Transistor SiHB22N60E FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

MOSTRAR MÁS

Otros transistores... SIHB12N65E, SIHB15N50E, SIHB15N60E, SIHB15N65E, SIHB16N50C, SIHB20N50E, SIHB22N60E, SIHB22N60S, IRFZ46N, SIHB23N60E, SIHB24N65E, SIHB28N60EF, SIHB30N60E, SIHB33N60E, SIHB33N60EF, SIHB6N65E, SIHB8N50D