IRF7404PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7404PBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 730 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SO-8

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IRF7404PBF datasheet

 ..1. Size:231K  international rectifier
 irf7404pbf.pdf pdf_icon

IRF7404PBF

PD - 95203 IRF7404PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel Mosfet VDSS = -20V 2 7 S D l Surface Mount 3 6 S l Available in Tape & Reel D 4 5 l Dynamic dv/dt Rating G D RDS(on) = 0.040 l Fast Switching Top View l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces

 0.1. Size:234K  international rectifier
 irf7404pbf-1.pdf pdf_icon

IRF7404PBF

IRF7404TRPbF-1 HEXFET Power MOSFET VDS -20 V A 1 8 S D RDS(on) max 0.04 2 7 (@V = -4.5V) S D GS Qg 50 nC 3 6 S D ID 4 5 -6.7 A G D (@T = 25 C) A Top View SO-8 Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Frie

 7.1. Size:242K  international rectifier
 irf7404qpbf.pdf pdf_icon

IRF7404PBF

PD - 96127A IRF7404QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D VDSS = -20V l P Channel MOSFET 2 7 S D l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 l 150 C Operating Temperature G D RDS(on) = 0.040 l Lead-Free Top View Description These HEXFET Power MOSFET's in package utilize the lastest processing techniqu

 7.2. Size:163K  international rectifier
 irf7404.pdf pdf_icon

IRF7404PBF

PD - 9.1246C IRF7404 HEXFET Power MOSFET Generation V Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.040 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to a

MOSTRAR MÁS

Otros transistores... SIHF15N65E, SIHF16N50C, SIHF18N50C, SIHF18N50D, SIHF22N60E, SIHF22N60S, IRF7404PBF-1, IRF7404QPBF, IRFB4110, IRF7406GPBF, IRF7406PBF, IRF7406PBF-1, IRF740ALPBF, IRF740APBF, IRF740ASPBF, IRF740B, IRF740LC