IRF7406PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRF7406PBF Datasheet (PDF)

..1. Size:235K international rectifier
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PD - 95302IRF7406PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceA1 8l P-Channel Mosfet S DVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.045l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

0.1. Size:231K international rectifier
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IRF7406TRPbF-1HEXFET Power MOSFETVDS -30 VA1 8S DRDS(on) max 0.045 2 7(@V = -10V) S DGSQg (max) 59 nC 3 6S DID 45G D-5.8 A(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environment

7.1. Size:262K international rectifier
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PD -96259IRF7406GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceAl P-Channel Mosfet1 8S Dl Surface MountVDSS = -30V2 7S Dl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl Lead-FreeRDS(on) = 0.045l Halogen-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize

7.2. Size:114K international rectifier
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PD - 9.1247CIRF7406PRELIMINARYHEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-Resistance S DVDSS = -30V2 7 P-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.045 Dynamic dv/dt Rating Fast SwitchingTop V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing te

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