IRF740PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRF740, SiHF740Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55RoHS* Fast SwitchingQg (Max.) (nC) 63 COMPLIANT Ease of ParallelingQgs (nC) 9.0Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

PD - 95301IRF7403PbFHEXFET Power MOSFETl Generation V TechnologyAl Ultra Low On-Resistance A1 8S Dl N-Channel MosfetVDSS = 30V2 7S Dl Surface Mount3 6l Available in Tape & ReelS Dl Dynamic dv/dt Rating45G DRDS(on) = 0.022l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced proc

PD - 95302IRF7406PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceA1 8l P-Channel Mosfet S DVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.045l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

PD - 94880IRF740LCPbF Lead-Free12/10/03Document Number: 91052 www.vishay.com1IRF740LCPbFDocument Number: 91052 www.vishay.com2IRF740LCPbFDocument Number: 91052 www.vishay.com3IRF740LCPbFDocument Number: 91052 www.vishay.com4IRF740LCPbFDocument Number: 91052 www.vishay.com5IRF740LCPbFDocument Number: 91052 www.vishay.com6IRF740LCPbFDocument Nu

PD - 95202IRF7402PbFHEXFET Power MOSFET Generation V TechnologyA Ultra Low On-ResistanceA1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package Low Profile (

PD -96259IRF7406GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceAl P-Channel Mosfet1 8S Dl Surface MountVDSS = -30V2 7S Dl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl Lead-FreeRDS(on) = 0.045l Halogen-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize

PD - 96127AIRF7404QPbFHEXFET Power MOSFETl Advanced Process TechnologyA1 8l Ultra Low On-ResistanceS DVDSS = -20Vl P Channel MOSFET2 7S Dl Surface Mount3 6S Dl Available in Tape & Reel4 5l 150C Operating TemperatureG DRDS(on) = 0.040l Lead-FreeTop ViewDescriptionThese HEXFET Power MOSFET's in packageutilize the lastest processing techniqu

PD- 95532SMPS MOSFETIRF740AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and D 2

PD - 95204IRF740SPbF Lead-Free4/29/04Document Number: 91055 www.vishay.com1IRF740SPbFDocument Number: 91055 www.vishay.com2IRF740SPbFDocument Number: 91055 www.vishay.com3IRF740SPbFDocument Number: 91055 www.vishay.com4IRF740SPbFDocument Number: 91055 www.vishay.com5IRF740SPbFDocument Number: 91055 www.vishay.com6IRF740SPbFD2Pak Package Outli

PD - 95724IRF7401PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceAA1 8l N-Channel MosfetS DVDSS = 20Vl Surface Mount 2 7S Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.022l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proc

PD- 92005SMPS MOSFETIRF740AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55 10A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 PakAvalanch

PD- 94828SMPS MOSFETIRF740APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanch

IRF7404TRPbF-1HEXFET Power MOSFETVDS -20 VA1 8S DRDS(on) max 0.04 2 7(@V = -4.5V) S DGSQg 50 nC 3 6S DID 4 5-6.7 A G D(@T = 25C)ATop View SO-8Features BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Frie

IRF7401PbF-1HEXFET Power MOSFETVDS 20 VAA1 8S DRDS(on) max 0.022 2 7(@V = 4.5V) S DGSQg 48 nC3 6S DID 4 58.7 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Fri

PD- 95532SMPS MOSFETIRF740AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and2

PD - 9.1246CIRF7404HEXFET Power MOSFET Generation V TechnologyA1 8S D Ultra Low On-ResistanceVDSS = -20V2 7 P-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.040 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to a

IRF7406TRPbF-1HEXFET Power MOSFETVDS -30 VA1 8S DRDS(on) max 0.045 2 7(@V = -10V) S DGSQg (max) 59 nC 3 6S DID 45G D-5.8 A(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environment

PD - 9.1244CIRF7401HEXFET Power MOSFET Generation V TechnologyAA1 8 Ultra Low On-Resistance S DVDSS = 20V2 7 N-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.022 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to

PD - 93851AIRF7402HEXFET Power MOSFET Generation V TechnologyAA Ultra Low On-Resistance 1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package3 6S D Low Profile (

PD - 95203IRF7404PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MosfetVDSS = -20V2 7S Dl Surface Mount3 6Sl Available in Tape & Reel D4 5l Dynamic dv/dt RatingG DRDS(on) = 0.040l Fast SwitchingTop Viewl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

PD - 9.1245BPRELIMINARY IRF7403HEXFET Power MOSFET Generation V TechnologyA Ultra Low On-Resistance A1 8S D N-Channel MosfetVDSS = 30V2 7S D Surface Mount3 6 Available in Tape & ReelS D Dynamic dv/dt Rating4 5G DRDS(on) = 0.022 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingte

PD - 94872IRF740PbF Lead-Free12/5/03Document Number: 91053 www.vishay.com1IRF740PbFDocument Number: 91053 www.vishay.com2IRF740PbFDocument Number: 91053 www.vishay.com3IRF740PbFDocument Number: 91053 www.vishay.com4IRF740PbFDocument Number: 91053 www.vishay.com5IRF740PbFDocument Number: 91053 www.vishay.com6IRF740PbFTO-220AB Package Outline

PD - 9.1247CIRF7406PRELIMINARYHEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-Resistance S DVDSS = -30V2 7 P-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.045 Dynamic dv/dt Rating Fast SwitchingTop V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing te

IRF740S N - CHANNEL 400V - 0.48 - 10A- D2PAKPowerMESH MOSFETTYPE VDSS RDS(on) IDIRF740S 400 V

IRF740 N - CHANNEL 400V - 0.48 - 10 A - TO-220PowerMESH MOSFETTYPE VDSS RDS(on) IDIRF740 400 V

November 2001IRF740B/IRFS740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

IRF740Bwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal designVDS (V) at TJ max. 450- Low area specific on-resistanceRDS(on) max. () at 25 C VGS = 10 V 0.6- Low input capacitance (Ciss)AvailableQg max. (nC) 30- Reduced capacitive switching lossesQgs (nC) 4- High body diode ruggednessQgd (nC) 7- Avalanche energy rated (U

IRF740A, SiHF740AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 400RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 36COMPLIANTRuggednessQgs (nC) 9.9 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 16and CurrentConfigur

IRF740S, SiHF740SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.0 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Sin

IRF740LC, SiHF740LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS*COMPLIANTQg (Max.) (nC) 39 Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche Rated Comp

IRF740AS, SiHF740AS, IRF740AL, SiHF740ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) ()VGS = 10 V 0.55 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 36 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.9RuggednessQgd (nC) 16 Fully Characterized Capac

IRF740, SiHF740Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55RoHS* Fast SwitchingQg (Max.) (nC) 63 COMPLIANT Ease of ParallelingQgs (nC) 9.0Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

IRF740LC, SiHF740LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS*COMPLIANTQg (Max.) (nC) 39 Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche Rated Comp

IRF740S, SiHF740SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.0 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Sin

IRF740A, SiHF740AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 400RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 36COMPLIANTRuggednessQgs (nC) 9.9 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 16and CurrentConfigur

Spec. No. : MOS200512HI-SINCERITYIssued Date : 2005.09.01Revised Date : 2005.09.22MICROELECTRONICS CORP.Page No. : 1/4HIRF740 Series Pin AssignmentHIRF740 / HIRF740FTabN-Channel Power MOSFET (400V, 10A)3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N-Channel MOSFETs provide the designer with the best combinationo

IRF740 Rev.H Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

IRF7404TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical

isc N-Channel Mosfet Transistor IRF740AFEATURESDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IRF740FIDESCRIPTIONDrain Current I = 5.5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltag

isc N-Channel MOSFET Transistor IRF740FEATURESDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM