IRF7424GPBF Todos los transistores

 

IRF7424GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF7424GPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 75 nC
   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 580 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
   Paquete / Cubierta: SO-8

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IRF7424GPBF Datasheet (PDF)

 ..1. Size:199K  international rectifier
irf7424gpbf.pdf

IRF7424GPBF
IRF7424GPBF

PD-96256IRF7424GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 13.5@VGS = -10V -11Al Surface Mount22@VGS = -4.5V -8.8Al Available in Tape & Reell Lead-Freel Halogen-FreeA1 8Description S DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques to3achieve the extremel

 7.1. Size:122K  international rectifier
irf7424pbf.pdf

IRF7424GPBF
IRF7424GPBF

PD- 95343IRF7424PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 13.5@VGS = -10V -11Al Surface Mount22@VGS = -4.5V -8.8Al Available in Tape & Reell Lead-FreeA1 8Description S DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques to3achieve the extremely low on-resista

 7.2. Size:229K  international rectifier
irf7424.pdf

IRF7424GPBF
IRF7424GPBF

PD- 94024AIRF7424HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-30V 13.5@VGS = -10V -11A Surface Mount22@VGS = -4.5V -8.8A Available in Tape & ReelA1 8Description S DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques to3achieve the extremely low on-

 7.3. Size:122K  infineon
irf7424pbf.pdf

IRF7424GPBF
IRF7424GPBF

PD- 95343IRF7424PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 13.5@VGS = -10V -11Al Surface Mount22@VGS = -4.5V -8.8Al Available in Tape & Reell Lead-FreeA1 8Description S DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques to3achieve the extremely low on-resista

 7.4. Size:873K  cn vbsemi
irf7424trpbf.pdf

IRF7424GPBF
IRF7424GPBF

IRF7424TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop

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