IRF7453 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD- 93899AIRF7453SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters250V 0.23@VGS = 10V 2.2ABenefitsA Low Gate to Drain Charge to ReduceA1 8S DSwitching Losses2 7S D Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (See 3 6S DApp. Note AN1001)45G D Fully C

PD- 95307IRF7453PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters250V 0.23W@VGS = 10V 2.2Al Lead-FreeBenefitsAl Low Gate to Drain Charge to ReduceA1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (See 3 6S DApp. Note AN1001)45G Dl Fully Char

PD- 93892CIRF7458SMPS MOSFETHEXFET Power MOSFETApplications High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 30V 8.0m 14A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefitsAA1 8 Ultra-Low Gate ImpedanceS D Very Low RDS(on) 2 7S D Fully Characterized Avalanche Vol

PD- 95731IRF7452PbF Lead-Freewww.irf.com 18/11/04IRF7452PbF2 www.irf.comIRF7452PbFwww.irf.com 3IRF7452PbF4 www.irf.comIRF7452PbFwww.irf.com 5IRF7452PbF6 www.irf.comIRF7452PbFSO-8 Package OutlineDimensions are shown in millimeters (inches)INCHES MILLIMETERSDIMD B MIN MAX MIN MAX5 A .0532 .0688 1.35 1.75AA1 .0040 .0098 0.10 0.25b .013 .020

PD - 95461IRF7455PbF Lead-Freewww.irf.com 16/29/04IRF7455PbF2 www.irf.comIRF7455PbFwww.irf.com 3IRF7455PbF4 www.irf.comIRF7455PbFwww.irf.com 5IRF7455PbF6 www.irf.comIRF7455PbFSO-8 Package OutlineDimensions are shown in milimeters (inches)INCHES MILLIMETERSDIMD B MIN MAX MIN MAX5 A .0532 .0688 1.35 1.75AA1 .0040 .0098 0.10 0.25b .013 .020

PD- 93882DIRF7457SMPS MOSFETHEXFET Power MOSFETApplications High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectification 20V 7.0m 15Afor Telecom and Industrial use High Frequency Buck Converters forComputer Processor PowerBenefitsAA1 8S D Ultra-Low RDS(on)2 7 Very Low Gate ImpedanceS D Fully Characterized Avalanche Volt

PD- 93898AIRF7451SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 150V 0.09 3.6ABenefits Low Gate to Drain Charge to ReduceAA1 8Switching LossesS D Fully Characterized Capacitance Including 2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5G D Fully Characteri

IRF7455PbF-1SMPS MOSFETHEXFET Power MOSFETVDS 30 VAA1 8S DRDS(on) max 0.0075 2 7(@V = 10V) S DGSQg (typical) 37 nC3 6S DID 4 515 A G D(@T = 25C)ASO-8Top ViewApplicationsl High Frequency DC-DC Converters with Synchronous RectificationFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Ex

PD- 93893AIRF7450SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.17@VGS = 10V 2.5ABenefitsA Low Gate to Drain Charge to ReduceA1 8S DSwitching Losses2 7S D Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (See 3 6S DApp. Note AN1001)45G D Fully C

PD- 93840BIRF7456SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High Frequency DC-DC Converters 20V 0.0065 16Awith Synchronous RectificationBenefitsAA Ultra-Low RDS(on) at 4.5V VGS 1 8S D Low Charge and Low Gate Impedance to2 7S DReduce Switching Losses3 6S D Fully Characterized Avalanche Voltage45and Current G DSO-8Top View

PD - 96113AIRF7452QPbFHEXFET Power MOSFETl Advanced Process TechnologyVDSS RDS(on) max IDl Ultra Low On-Resistancel N Channel MOSFET 100V 0.060 4.5Al Surface Mountl Available in Tape & Reell 150C Operating Temperaturel Lead-FreeADescription A1 8S DThese HEXFET Power MOSFET's in SO-82 7S Dpackage utilize the lastest processing techniques3 6to ac

PD - 95459AIRF7459PbFSMPS MOSFETApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectification 20V 9.0m 12Afor Telecom and Industrial usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsAA1 8S Dl Ultra-Low Gate Impedance2 7S Dl Very Low RDS(on) at 4.5V VGS3

PD- 95725IRF7451PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.09W 3.6Al Lead-FreeBenefitsl Low Gate to Drain Charge to ReduceAA1 8Switching LossesS Dl Fully Characterized Capacitance Including 2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5G Dl Fully Characterized

PD- 93897CIRF7452SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 100V 0.060 4.5ABenefits Low Gate to Drain Charge to ReduceAA1 8Switching Losses S D2 7 Fully Characterized Capacitance IncludingS DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5G D Fully Characterized Avalanche Volta

PD - 95249AIRF7456PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High Frequency DC-DC Converters 20V 0.0065 16Awith Synchronous Rectificationl Lead-FreeBenefitsAAl Ultra-Low RDS(on) at 4.5V VGS1 8S Dl Low Charge and Low Gate Impedance to2 7S DReduce Switching Losses3 6S Dl Fully Characterized Avalanche Voltage45and Curren

PD- 95268IRF7458PbFSMPS MOSFETHEXFET Power MOSFETApplicationsl High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 30V 8.0m 14A for Telecom and Industrial Usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeAA1 8Benefits S D2 7S Dl Ultra-Low Gate Impedance3 6l Very Low RDS(on)S Dl Ful

PD- 95306IRF7450PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.17W@VGS = 10V 2.5Al Lead-FreeBenefitsAl Low Gate to Drain Charge to ReduceA1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (See 3 6S DApp. Note AN1001)45G Dl Fully Char

PD- 93842BIRF7455SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High Frequency DC-DC Converters 30V 0.0075 15Awith Synchronous RectificationBenefits Ultra-Low RDS(on) at 4.5V VGSAA Low Charge and Low Gate Impedance to 1 8S DReduce Switching Losses2 7S D Fully Characterized Avalanche Voltage3 6S Dand Current4 5G DSO-8Top View

PD- 95032SMPS MOSFET IRF7457PbFHEXFET Power MOSFETApplicationsl High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectification 20V 7.0m 15Afor Telecom and Industrial usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsAA1 8S Dl Ultra-Low RDS(on)2 7l Very Low Gate ImpedanceS Dl Fully Character

SMPS MOSFETIRF7456PbF-1HEXFET Power MOSFETVDS 20 VAARDS(on) max 1 8S D0.0065 (@V = 10V)GS2 7S DQg (typical) 41 nC3 6S DID 16 A4 5G D(@T = 25C)ASO-8Top ViewApplicationsl High Frequency DC-DC Converters with Synchronous RectificationFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Exi

IRF7457PbF-1HEXFET Power MOSFETVDS 20 VRDS(on) max AA7.0 m1 8S D(@V = 10V)GS2 7RDS(on) max S D10.5 m(@V = 4.5V) 3 6GSS DQg (typical) 28 nC4 5G DID 15 ASO-8(@T = 25C)A Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS

PD- 93885BIRF7459SMPS MOSFETApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectification 20V 9.0m 12Afor Telecom and Industrial use High Frequency Buck Converters forComputer Processor PowerBenefitsAA1 8S D Ultra-Low Gate Impedance2 7S D Very Low RDS(on) at 4.5V VGS3 6 Fully Characteriz

IRF7455TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch