IRF7455PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7455PBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 870 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: SO-8

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IRF7455PBF datasheet

 ..1. Size:1025K  international rectifier
 irf7455pbf.pdf pdf_icon

IRF7455PBF

PD - 95461 IRF7455PbF Lead-Free www.irf.com 1 6/29/04 IRF7455PbF 2 www.irf.com IRF7455PbF www.irf.com 3 IRF7455PbF 4 www.irf.com IRF7455PbF www.irf.com 5 IRF7455PbF 6 www.irf.com IRF7455PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) INCHES MILLIMETERS DIM D B MIN MAX MIN MAX 5 A .0532 .0688 1.35 1.75 A A1 .0040 .0098 0.10 0.25 b .013 .020

 0.1. Size:668K  international rectifier
 irf7455pbf-1.pdf pdf_icon

IRF7455PBF

IRF7455PbF-1 SMPS MOSFET HEXFET Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 0.0075 2 7 (@V = 10V) S D GS Qg (typical) 37 nC 3 6 S D ID 4 5 15 A G D (@T = 25 C) A SO-8 Top View Applications l High Frequency DC-DC Converters with Synchronous Rectification Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Ex

 7.1. Size:167K  international rectifier
 irf7455.pdf pdf_icon

IRF7455PBF

PD- 93842B IRF7455 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency DC-DC Converters 30V 0.0075 15A with Synchronous Rectification Benefits Ultra-Low RDS(on) at 4.5V VGS A A Low Charge and Low Gate Impedance to 1 8 S D Reduce Switching Losses 2 7 S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G D SO-8 Top View

 7.2. Size:1491K  cn vbsemi
 irf7455tr.pdf pdf_icon

IRF7455PBF

IRF7455TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

MOSTRAR MÁS

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