IRL3803L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL3803L 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 140 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 230 nS
Cossⓘ - Capacitancia de salida: 1800 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Encapsulados: TO262
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IRL3803L datasheet
..1. Size:397K international rectifier
irl3803lpbf irl3803spbf.pdf 
PD-95101A IRL3803SPbF IRL3803LPbF Lead-Free www.irf.com 1 12/9/04 IRL3803S/LPbF 2 www.irf.com IRL3803S/LPbF www.irf.com 3 IRL3803S/LPbF 4 www.irf.com IRL3803S/LPbF www.irf.com 5 IRL3803S/LPbF 6 www.irf.com IRL3803S/LPbF www.irf.com 7 IRL3803S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) 8 www.irf.com IRL3803S/LPbF TO-262 Package Outl
..2. Size:157K international rectifier
irl3803s irl3803l.pdf
PD - 9.1319D IRL3803S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 30V Surface Mount (IRL3803S) Low-profile through-hole (IRL3803L) 175 C Operating Temperature RDS(on) = 0.006 Fast Switching G Fully Avalanche Rated ID = 140A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu
..3. Size:397K international rectifier
irl3803spbf irl3803lpbf.pdf
PD-95101A IRL3803SPbF IRL3803LPbF Lead-Free www.irf.com 1 12/9/04 IRL3803S/LPbF 2 www.irf.com IRL3803S/LPbF www.irf.com 3 IRL3803S/LPbF 4 www.irf.com IRL3803S/LPbF www.irf.com 5 IRL3803S/LPbF 6 www.irf.com IRL3803S/LPbF www.irf.com 7 IRL3803S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) 8 www.irf.com IRL3803S/LPbF TO-262 Package Outl
7.1. Size:273K international rectifier
irl3803vspbf irl3803vlpbf.pdf
PD - 95449 IRL3803VSPbF IRL3803VLPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5m l 175 C Operating Temperature G l Fast Switching l Fully Avalanche Rated ID = 140A S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rec
7.2. Size:225K international rectifier
irl3803vl irl3803vs.pdf
PD - 94735 IRL3803VS IRL3803VL HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5m l 175 C Operating Temperature G l Fast Switching ID = 140A l Fully Avalanche Rated S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize ad
7.3. Size:145K international rectifier
irl3803.pdf
PD - 91301C IRL3803 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.006 175 C Operating Temperature G Fast Switching Fully Avalanche Rated ID = 140A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the
7.4. Size:962K international rectifier
irl3803pbf.pdf
PD - 94996 IRL3803PbF Lead-Free www.irf.com 1 2/10/04 IRL3803PbF 2 www.irf.com IRL3803PbF www.irf.com 3 IRL3803PbF 4 www.irf.com IRL3803PbF www.irf.com 5 IRL3803PbF 6 www.irf.com IRL3803PbF www.irf.com 7 IRL3803PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13
7.5. Size:210K international rectifier
irl3803vpbf.pdf
PD - 95955 IRL3803VPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 5.5m l Fast Switching G l Fully Avalanche Rated ID = 140A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve
7.6. Size:287K cn vbsemi
irl3803s.pdf
IRL3803S www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0038 at VGS = 10 V 98 30 82 nC 0.0044 at VGS = 4.5 V 98 APPLICATIONS OR-ing Server DC/DC D I2PAK D2PAK (TO-262) (TO-263) G G D S S VBNC
7.7. Size:251K inchange semiconductor
irl3803vs.pdf
isc N-Channel MOSFET Transistor IRL3803VS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
7.8. Size:246K inchange semiconductor
irl3803.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL3803 IIRL3803 FEATURES Static drain-source on-resistance RDS(on) 6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RAT
7.9. Size:245K inchange semiconductor
irl3803v.pdf
isc N-Channel MOSFET Transistor IRL3803V IIRL3803V FEATURES Static drain-source on-resistance RDS(on) 5.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an ext
Otros transistores... IRL3402, IRL3402S, IRL3502, IRL3502S, IRL3705N, IRL3705NL, IRL3705NS, IRL3803, IRFB3607, IRL3803S, IRL510, IRL510A, IRL511, IRL520, IRL520A, IRL520N, IRL520NL
