IRF7469PBF-1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7469PBF-1  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.2 nS

Cossⓘ - Capacitancia de salida: 480 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: SO-8

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IRF7469PBF-1 datasheet

 ..1. Size:193K  international rectifier
 irf7469pbf-1.pdf pdf_icon

IRF7469PBF-1

IRF7469PbF-1 HEXFET Power MOSFET VDS 40 V RDS(on) max A A 17 1 8 S D (@V = 10V) GS m 2 7 RDS(on) max S D 21 (@V = 4.5V) GS 3 6 S D Qg (typical) 15 nC 4 5 G D ID 9.0 A SO-8 (@T = 25 C) A Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS C

 4.1. Size:126K  international rectifier
 irf7469pbf.pdf pdf_icon

IRF7469PBF-1

PD- 95286 IRF7469PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max(mW) ID l High Frequency Isolated DC-DC 40V 17@VGS = 10V 9.0A Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for A Computer Processor Power A 1 8 S D l Lead-Free 2 7 S D 3 6 S D Benefits 4 5 G D l Ultra-Low Gate Impedance l Ver

 7.1. Size:114K  international rectifier
 irf7469.pdf pdf_icon

IRF7469PBF-1

PD- 93951A IRF7469 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max(m ) ID ) ) ) High Frequency Isolated DC-DC 40V 17@VGS = 10V 9.0A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for A Computer Processor Power A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Very Lo

 7.2. Size:1508K  cn vbsemi
 irf7469tr.pdf pdf_icon

IRF7469PBF-1

IRF7469TR www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectifi

MOSTRAR MÁS

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