IRF7473PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7473PBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: SO-8

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IRF7473PBF datasheet

 ..1. Size:126K  international rectifier
 irf7473pbf.pdf pdf_icon

IRF7473PBF

PD- 95559 IRF7473PbF HEXFET Power MOSFET Applications l Telecom and Data-Com 24 and 48V VDSS RDS(on) max ID input DC-DC converters l Motor Control 100V 26mW@VGS = 10V 6.9A l Uninterrutible Power Supply l Lead-Free Benefits l Ultra Low On-Resistance A A 1 8 l High Speed Switching S D l Low Gate Drive Current Due to Improved 2 7 S D Gate Charge Characteristic 3 6 S D l Imp

 0.1. Size:193K  international rectifier
 irf7473pbf-1.pdf pdf_icon

IRF7473PBF

IRF7473PbF-1 HEXFET Power MOSFET A VDS 100 V A 1 8 S D RDS(on) max 26 m 2 7 (@V = 10V) S D GS Qg (typical) 61 nC 3 6 S D ID 4 5 6.9 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmen

 7.1. Size:196K  international rectifier
 irf7473.pdf pdf_icon

IRF7473PBF

PD- 94037A IRF7473 HEXFET Power MOSFET Applications VDSS RDS(on) max ID Telecom and Data-Com 24 and 48V input DC-DC converters 100V 26m @VGS = 10V 6.9A Motor Control Uninterrutible Power Supply Benefits Ultra Low On-Resistance A A High Speed Switching 1 8 S D Low Gate Drive Current Due to Improved 2 7 S D Gate Charge Characteristic 3 6 S D Im

 7.2. Size:1772K  cn vbsemi
 irf7473tr.pdf pdf_icon

IRF7473PBF

IRF7473TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO

MOSTRAR MÁS

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