IRF7493PBF Datasheet. Equivalente

 ..1. Size:159K  international rectifier
 irf7493pbf.pdf

PD - 95289 IRF7493PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High frequency DC-DC converters l Lead-Free 15m @VGS=10V 80V 35nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Av

 0.1. Size:218K  international rectifier
 irf7493pbf-1.pdf

IRF7493PbF-1 HEXFET Power MOSFET VDS 80 V A A 1 8 S D RDS(on) max 15 m 2 7 (@V = 10V) GS S D Qg (typical) 35 nC 3 6 S D ID 4 5 9.3 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmenta

 7.1. Size:92K  international rectifier
 irf7493.pdf

PD - 94654 PROVISIONAL IRF7493 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 80V 15m @VGS = 10V 9.2A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized Avalanch

 8.1. Size:146K  international rectifier
 irf7495pbf.pdf

PD - 95288 IRF7495PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 22m @VGS = 10V 7.3A l Lead-Free Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized Avala

 8.2. Size:567K  international rectifier
 irf7494.pdf

FOR REVIEW ONLY PD - 94641 PD - TBD IRF7494 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 44m @VGS = 10V 150V 5.2A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Charact

 8.3. Size:183K  international rectifier
 irf7492pbf.pdf

PD - 95287A IRF7492PbF HEXFET Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 200V 79mW@VGS = 10V 3.7A l Lead-Free Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized Ava

 8.4. Size:149K  international rectifier
 irf7490pbf.pdf

PD - 95284 IRF7490PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg l Lead-Free 100V 39mW@VGS=10V 37nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche

 8.5. Size:105K  international rectifier
 irf7492.pdf

PD - 94498 IRF7492 HEXFET Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters 200V 79m @VGS = 10V 3.7A Benefits A A Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See 4 App. Note AN1001) 5 G D Fully Characterized A

 8.6. Size:508K  international rectifier
 irf7491.pdf

PD - 94537 IRF7491 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 80V 16m @VGS = 10V 9.7A Benefits A A Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage SO-8

 8.7. Size:223K  international rectifier
 irf7494pbf.pdf

PD - 95349C IRF7494PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 44m 150V @VGS = 10V 5.1A l Lead-Free Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized

 8.8. Size:141K  international rectifier
 irf7490.pdf

PD - 94508 IRF7490 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg 100V 39mW@VGS=10V 37nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche Voltage G D an