IRL510A Todos los transistores

IRL510A FEATURES BVDSS = 100 V Logic-Level Gate Drive RDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 5.6 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maxi

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic-Level Gate Drive RDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 5.6 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rating

PD - 95406 IRL510PbF Lead-Free 6/17/04 Document Number 91297 www.vishay.com 1 IRL510PbF Document Number 91297 www.vishay.com 2 IRL510PbF Document Number 91297 www.vishay.com 3 IRL510PbF Document Number 91297 www.vishay.com 4 IRL510PbF Document Number 91297 www.vishay.com 5 IRL510PbF Document Number 91297 www.vishay.com 6 IRL510PbF TO-220AB Package Outline

Document Number 90380 www.vishay.com 1313 Document Number 90380 www.vishay.com 1314 Document Number 90380 www.vishay.com 1315 Document Number 90380 www.vishay.com 1316 Document Number 90380 www.vishay.com 1317 Document Number 90380 www.vishay.com 1318 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as

IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.6 Logic-Level Gate Drive Qgd (nC) 3.3 RDS(on) Specified at VGS = 4

IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.6 175 C Operating Temperature Qgd (nC) 3.3 Fast Switching Configuration Si

IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.6 Logic-Level Gate Drive Qgd (nC) 3.3 RDS(on) Specified at VGS = 4

IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.6 175 C Operating Temperature Qgd (nC) 3.3 Fast Switching Configuration Si