IRF7521D1PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7521D1PBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm

Encapsulados: MICRO-8

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IRF7521D1PBF datasheet

 ..1. Size:193K  international rectifier
 irf7521d1pbf.pdf pdf_icon

IRF7521D1PBF

PD- 95241 IRF7521D1PbF FETKY MOSFET / Schottky Diode l Co-packaged HEXFET Power MOSFET 1 8 and Schottky Diode A K VDSS = 20V l N-Channel HEXFET 2 7 A K l Low VF Schottky Rectifier 3 6 RDS(on) = 0.135 S D l Generation 5 Technology TM 4 l Micro8 Footprint 5 G D Schottky Vf = 0.39V l Lead-Free Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky

 5.1. Size:177K  international rectifier
 irf7521d1.pdf pdf_icon

IRF7521D1PBF

PD-91646C IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET 1 8 A K and Schottky Diode VDSS = 20V 2 7 N-Channel HEXFET A K Low VF Schottky Rectifier 3 6 RDS(on) = 0.135 S D Generation 5 Technology 4 5 TM G D Micro8 Footprint Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFE

 8.1. Size:204K  international rectifier
 irf7523d1.pdf pdf_icon

IRF7521D1PBF

PD- 91647C IRF7523D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET 1 8 A K and Schottky Diode VDSS = 30V 2 7 N-Channel HEXFET A K Low VF Schottky Rectifier 3 6 RDS(on) = 0.11 S D Generation 5 Technology 4 5 TM G D Micro8 Footprint Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schott

 8.2. Size:197K  international rectifier
 irf7524d1gpbf.pdf pdf_icon

IRF7521D1PBF

PD -96176 IRF7524D1GPbF FETKYTM MOSFET & Schottky Diode l Co-packaged HEXFET Power 1 8 MOSFET and Schottky Diode K A VDSS = -20V l P-Channel HEXFET 2 7 A K l Low VF Schottky Rectifier 3 6 S D l Generation 5 Technology RDS(on) = 0.27 TM 4 5 l Micro8 Footprint G D l Lead-Free Schottky Vf = 0.39V l Halogen-Free Top View Description The FETKYTM family of co-packaged H

MOSTRAR MÁS

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