IRF7603PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF7603PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: MICRO-8

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IRF7603PBF Datasheet (PDF)

..1. Size:1300K international rectifier
irf7603pbf.pdf

PD- 95347IRF7603PbF Lead-Freewww.irf.com 102/22/05IRF7603PbF2 www.irf.comIRF7603PbFwww.irf.com 3IRF7603PbF4 www.irf.comIRF7603PbFwww.irf.com 5IRF7603PbF6 www.irf.comIRF7603PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91

7.1. Size:113K international rectifier
irf7603.pdf

PD - 9.1262DIRF7603HEXFET Power MOSFET Generation V TechnologyAA1 8 Ultra Low On-ResistanceS D N-Channel MOSFET VDSS = 30V2 7S D Very Small SOIC Package3 6S D Low Profile (

8.1. Size:116K international rectifier
irf7601.pdf

PD - 9.1261DIRF7601HEXFET Power MOSFET Generation V TechnologyAA Ultra Low On-Resistance1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package3 6 Low Profile (

8.2. Size:183K international rectifier
irf7606pbf.pdf

PD - 95245IRF7606PbFHEXFET Power MOSFETl Generation V TechnologyA1 8l Ultra Low On-ResistanceS Dl P-Channel MOSFET2 7 VDSS = -30VS Dl Very Small SOIC Package3 6S Dl Low Profile (

8.3. Size:134K international rectifier
irf7604.pdf

PD - 9.1263EIRF7604HEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-ResistanceS D P-Channel MOSFETVDSS = -20V2 7S D Very Small SOIC Package3 6S D Low Profile (

8.4. Size:77K international rectifier
irf7607.pdf

PD - 93845PROVISIONALIRF7607HEXFET Power MOSFET Trench TechnologyAA1 8 Ultra Low On-ResistanceS DVDSS = 20V N-Channel MOSFET2 7S D Very Small SOIC Package3 6S D Low Profile (

8.5. Size:102K international rectifier
irf7606.pdf

PD - 9.1264CIRF7606HEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-ResistanceS D P-Channel MOSFET2 7 VDSS = -30VS D Very Small SOIC Package3 6S D Low Profile (

8.6. Size:208K international rectifier
irf7601pbf.pdf

PD - 95244IRF7601PbF Lead-Freewww.irf.com 15/13/04IRF7601PbF2 www.irf.comIRF7601PbFwww.irf.com 3IRF7601PbF4 www.irf.comIRF7601PbFwww.irf.com 5IRF7601PbF6 www.irf.comIRF7601PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91

8.7. Size:144K international rectifier
irf7607pbf.pdf

PD - 95698IRF7607PbFHEXFET Power MOSFETl Trench TechnologyAA1 8l Ultra Low On-ResistanceS DVDSS = 20Vl N-Channel MOSFET2 7S Dl Very Small SOIC Package3 6S Dl Low Profile (

8.8. Size:208K infineon
irf7601pbf.pdf

8.9. Size:144K infineon
irf7607pbf.pdf

PD - 95698IRF7607PbFHEXFET Power MOSFETl Trench TechnologyAA1 8l Ultra Low On-ResistanceS DVDSS = 20Vl N-Channel MOSFET2 7S Dl Very Small SOIC Package3 6S Dl Low Profile (

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