IRL511 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL511
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 80
V
|Id|ⓘ - Corriente continua de drenaje: 4
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75
Ohm
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de IRL511 MOSFET
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Selección ⓘ de transistores por parámetros
IRL511 datasheet
9.1. Size:227K international rectifier
irl510pbf.pdf 
PD - 95406 IRL510PbF Lead-Free 6/17/04 Document Number 91297 www.vishay.com 1 IRL510PbF Document Number 91297 www.vishay.com 2 IRL510PbF Document Number 91297 www.vishay.com 3 IRL510PbF Document Number 91297 www.vishay.com 4 IRL510PbF Document Number 91297 www.vishay.com 5 IRL510PbF Document Number 91297 www.vishay.com 6 IRL510PbF TO-220AB Package Outline
9.2. Size:163K international rectifier
irl510s.pdf 
Document Number 90380 www.vishay.com 1313 Document Number 90380 www.vishay.com 1314 Document Number 90380 www.vishay.com 1315 Document Number 90380 www.vishay.com 1316 Document Number 90380 www.vishay.com 1317 Document Number 90380 www.vishay.com 1318 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as
9.4. Size:242K fairchild semi
irl510a.pdf 
IRL510A FEATURES BVDSS = 100 V Logic-Level Gate Drive RDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 5.6 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maxi
9.5. Size:885K samsung
irl510a.pdf 
Advanced Power MOSFET FEATURES BVDSS = 100 V Logic-Level Gate Drive RDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 5.6 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rating
9.7. Size:272K vishay
irl510s sihl510s.pdf 
IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.6 Logic-Level Gate Drive Qgd (nC) 3.3 RDS(on) Specified at VGS = 4
9.8. Size:1077K vishay
irl510pbf sihl510.pdf 
IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.6 175 C Operating Temperature Qgd (nC) 3.3 Fast Switching Configuration Si
9.9. Size:297K vishay
irl510spbf sihl510s.pdf 
IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.6 Logic-Level Gate Drive Qgd (nC) 3.3 RDS(on) Specified at VGS = 4
9.10. Size:1074K vishay
irl510 sihl510.pdf 
IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.6 175 C Operating Temperature Qgd (nC) 3.3 Fast Switching Configuration Si
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History: BSC190N15NS3G