SIHF28N60EF Todos los transistores

 

SIHF28N60EF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHF28N60EF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 39 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 28 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 80 nC

Tiempo de elevación (tr): 40 nS

Conductancia de drenaje-sustrato (Cd): 123 pF

Resistencia drenaje-fuente RDS(on): 0.123 Ohm

Empaquetado / Estuche: TO-220FP

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SIHF28N60EF Datasheet (PDF)

1.1. sihf28n60ef.pdf Size:156K _upd-mosfet

SIHF28N60EF
SIHF28N60EF

SiHF28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY • Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology • Reduced trr, Qrr, and IRRM RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.123 • Low figure-of-merit (FOM): Ron x Qg Qg (Max.) (nC) 120 • Low input capacitance (Ciss) Qgs (nC) 17 • Low switc

5.1. sihf23n60e.pdf Size:167K _upd-mosfet

SIHF28N60EF
SIHF28N60EF

SiHF23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.158 • Reduced switching and conduction losses Qg max. (nC) 95 • Ultra low gate charge (Qg) Qgs (nC) 16 Qgd (nC) 25 • Avalanche energy rated (UIS) Con

5.2. sihf22n60e.pdf Size:165K _upd-mosfet

SIHF28N60EF
SIHF28N60EF

SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.18 • Reduced Switching and Conduction Losses Qg max. (nC) 86 • Ultra Low Gate Charge (Qg) Qgs (nC) 14 • Avalanche Energy Rated (UIS) Qgd (nC) 26 •

 5.3. sihf22n65e.pdf Size:163K _upd-mosfet

SIHF28N60EF
SIHF28N60EF

SiHF22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 • Reduced switching and conduction losses Available Qg max. (nC) 110 • Ultra low gate charge (Qg) Qgs (nC) 15 • Avalanche energy rated (UIS) Availa

5.4. sihf22n60s.pdf Size:165K _upd-mosfet

SIHF28N60EF
SIHF28N60EF

SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY • Generation One VDS at TJ max. (V) 650 • High EAR Capability RDS(on) max. at 25 °C () VGS = 10 V 0.190 • Lower Figure-of-Merit Ron x Qg Qg max. (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 Qgd (nC) 25 • Ultra Low Ron Configuration Single • dV/dt Ruggedness • Ultra Low G

 5.5. sihf22n65e.pdf Size:225K _update-mosfet

SIHF28N60EF
SIHF28N60EF

isc N-Channel MOSFET Transistor SiHF22N65E ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

5.6. sihf22n60s.pdf Size:163K _vishay

SIHF28N60EF
SIHF28N60EF

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