SIHF28N60EF Todos los transistores

 

SIHF28N60EF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHF28N60EF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 39 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 123 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.123 Ohm
   Paquete / Cubierta: TO-220FP
 

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SIHF28N60EF Datasheet (PDF)

 ..1. Size:156K  vishay
 sihf28n60ef.pdf pdf_icon

SIHF28N60EF

SiHF28N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) max. at 25 C () VGS = 10 V 0.123 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 120 Low input capacitance (Ciss)Qgs (nC) 17 Low switc

 9.1. Size:165K  vishay
 sihf22n60e.pdf pdf_icon

SIHF28N60EF

SiHF22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced Switching and Conduction LossesQg max. (nC) 86 Ultra Low Gate Charge (Qg)Qgs (nC) 14 Avalanche Energy Rated (UIS)Qgd (nC) 26

 9.2. Size:167K  vishay
 sihf23n60e.pdf pdf_icon

SIHF28N60EF

SiHF23N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.158 Reduced switching and conduction lossesQg max. (nC) 95 Ultra low gate charge (Qg)Qgs (nC) 16Qgd (nC) 25 Avalanche energy rated (UIS)Con

 9.3. Size:165K  vishay
 sihf22n60s.pdf pdf_icon

SIHF28N60EF

SiHF22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS at TJ max. (V) 650 High EAR CapabilityRDS(on) max. at 25 C () VGS = 10 V 0.190 Lower Figure-of-Merit Ron x QgQg max. (nC) 98 100 % Avalanche TestedQgs (nC) 17Qgd (nC) 25 Ultra Low RonConfiguration Single dV/dt Ruggedness Ultra Low G

MOSTRAR MÁS

Otros transistores... IRF7526D1PBF , IRF7534D1 , IRF7534D1PBF , IRF7580M , IRF7601PBF , IRF7603PBF , SIHF22N65E , SIHF23N60E , IRFP260N , SIHF30N60E , SIHF510 , SIHF510S , SIHF520 , SIHF520S , SIHF530 , SIHF530S , SIHF540 .

History: STL80N3LLH6 | BUK962R8-30B

 

 
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