SIHF520 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRF520, SiHF520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* 175 C Operating TemperatureQg (Max.) (nC) 16COMPLIANT Fast SwitchingQgs (nC) 4.4 Ease of ParallelingQgd (nC) 7.7 Simple Drive RequirementsConfiguration Single Complia

IRF520, SiHF520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* 175 C Operating TemperatureQg (Max.) (nC) 16COMPLIANT Fast SwitchingQgs (nC) 4.4 Ease of ParallelingQgd (nC) 7.7 Simple Drive RequirementsConfiguration Single Complia

IRF520, SiHF520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* 175 C Operating TemperatureQg (Max.) (nC) 16COMPLIANT Fast SwitchingQgs (nC) 4.4 Ease of ParallelingQgd (nC) 7.7 Simple Drive RequirementsConfiguration Single Complia

IRF520S, SiHF520SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.27 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 4.4 175 C Operating TemperatureQgd (nC) 7.7 Fast Switching Eas

IRF510, SiHF510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 8.3 Fast SwitchingQgs (nC) 2.3 Ease of ParallelingQgd (nC) 3.8 Simple Drive RequirementsConfiguration Single Compli

IRF510S, SiHF510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.3 175 C Operating TemperatureQgd (nC) 3.8 Fast Switching Ea

IRF530S, SiHF530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 26 Dynamic dV/dt RatingQgs (nC) 5.5 Repetitive Avalanche Rated 175 C Operating TemperatureQgd (nC) 11 Fast SwitchingConfigu

IRF540, SiHF540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.077RoHS* 175 C Operating TemperatureQg (Max.) (nC) 72COMPLIANT Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Complian

IRF510S, SiHF510Swww.vishay.comVishay SiliconixPower MOSFETFEATURESD Surface-mount Available in tape and reel D2PAK (TO-263) Dynamic dv/dt ratingAvailable Repetitive avalanche ratedG 175 C operating temperatureAvailable Fast switching Ease of parallelingDG Material categorization: for definitions of complianceSSplease see www.

IRF530, SiHF530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.16RoHS* 175 C Operating TemperatureQg (Max.) (nC) 26COMPLIANT Fast SwitchingQgs (nC) 5.5 Ease of ParallelingQgd (nC) 11 Simple Drive RequirementsConfiguration Single Complian

SiHF5N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 1.5- Low Input Capacitance (Ciss)Qg (max.) (nC) 20- Reduced Capacitive Switching LossesQgs (nC) 3- High Body Diode RuggednessQgd (nC) 5- Avalanche Energy Rated (UIS)Co

IRF530S, SiHF530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 26 Dynamic dV/dt RatingQgs (nC) 5.5 Repetitive Avalanche Rated 175 C Operating TemperatureQgd (nC) 11 Fast SwitchingConfigu

IRF530, SiHF530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.16RoHS* 175 C Operating TemperatureQg (Max.) (nC) 26COMPLIANT Fast SwitchingQgs (nC) 5.5 Ease of ParallelingQgd (nC) 11 Simple Drive RequirementsConfiguration Single Complian

IRF540S, SiHF540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Surface MountRDS(on) ()VGS = 10 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 72 Dynamic dV/dt RatingQgs (nC) 11 Repetitive Avalanche RatedQgd (nC) 32 175 C Operating TemperatureConfiguration Single Fa

IRF540, SiHF540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.077RoHS* 175 C Operating TemperatureQg (Max.) (nC) 72COMPLIANT Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Complian

IRF510, SiHF510www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 100Available Repetitive avalanche ratedRDS(on) ()VGS = 10 V 0.54 175 C operating temperatureAvailableQg max. (nC) 8.3 Fast switchingQgs (nC) 2.3 Ease of parallelingQgd (nC) 3.8 Simple drive requirementsConfiguration Single

IRF510, SiHF510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 8.3 Fast SwitchingQgs (nC) 2.3 Ease of ParallelingQgd (nC) 3.8 Simple Drive RequirementsConfiguration Single Compli