SIHF530 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHF530
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 88 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 34 nS
Cossⓘ - Capacitancia de salida: 250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Encapsulados: TO-220AB
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SIHF530 datasheet
..1. Size:202K vishay
sihf530.pdf 
IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.16 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 26 COMPLIANT Fast Switching Qgs (nC) 5.5 Ease of Paralleling Qgd (nC) 11 Simple Drive Requirements Configuration Single Complian
..2. Size:201K vishay
irf530 sihf530.pdf
IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.16 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 26 COMPLIANT Fast Switching Qgs (nC) 5.5 Ease of Paralleling Qgd (nC) 11 Simple Drive Requirements Configuration Single Complian
0.1. Size:197K vishay
sihf530s.pdf
IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 10 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 26 Dynamic dV/dt Rating Qgs (nC) 5.5 Repetitive Avalanche Rated 175 C Operating Temperature Qgd (nC) 11 Fast Switching Configu
0.2. Size:171K vishay
irf530s sihf530s.pdf
IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 10 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 26 Dynamic dV/dt Rating Qgs (nC) 5.5 Repetitive Avalanche Rated 175 C Operating Temperature Qgd (nC) 11 Fast Switching Configu
9.1. Size:201K vishay
irf510pbf sihf510.pdf
IRF510, SiHF510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 8.3 Fast Switching Qgs (nC) 2.3 Ease of Paralleling Qgd (nC) 3.8 Simple Drive Requirements Configuration Single Compli
9.2. Size:196K vishay
irf510strlpbf irf510strrpbf sihf510s.pdf
IRF510S, SiHF510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 10 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.3 175 C Operating Temperature Qgd (nC) 3.8 Fast Switching Ea
9.3. Size:201K vishay
sihf520.pdf
IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 16 COMPLIANT Fast Switching Qgs (nC) 4.4 Ease of Paralleling Qgd (nC) 7.7 Simple Drive Requirements Configuration Single Complia
9.4. Size:202K vishay
sihf540.pdf
IRF540, SiHF540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.077 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 72 COMPLIANT Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 32 Simple Drive Requirements Configuration Single Complian
9.5. Size:210K vishay
irf510s sihf510s.pdf
IRF510S, SiHF510S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount Available in tape and reel D2PAK (TO-263) Dynamic dv/dt rating Available Repetitive avalanche rated G 175 C operating temperature Available Fast switching Ease of paralleling D G Material categorization for definitions of compliance S S please see www.
9.6. Size:167K vishay
sihf5n50d.pdf
SiHF5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 1.5 - Low Input Capacitance (Ciss) Qg (max.) (nC) 20 - Reduced Capacitive Switching Losses Qgs (nC) 3 - High Body Diode Ruggedness Qgd (nC) 5 - Avalanche Energy Rated (UIS) Co
9.7. Size:196K vishay
sihf540s.pdf
IRF540S, SiHF540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Surface Mount RDS(on) ( )VGS = 10 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 72 Dynamic dV/dt Rating Qgs (nC) 11 Repetitive Avalanche Rated Qgd (nC) 32 175 C Operating Temperature Configuration Single Fa
9.8. Size:201K vishay
irf520 sihf520.pdf
IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 16 COMPLIANT Fast Switching Qgs (nC) 4.4 Ease of Paralleling Qgd (nC) 7.7 Simple Drive Requirements Configuration Single Complia
9.9. Size:195K vishay
sihf520s.pdf
IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 10 V 0.27 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 4.4 175 C Operating Temperature Qgd (nC) 7.7 Fast Switching Eas
9.10. Size:202K vishay
irf540 sihf540.pdf
IRF540, SiHF540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.077 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 72 COMPLIANT Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 32 Simple Drive Requirements Configuration Single Complian
9.11. Size:279K vishay
irf510 sihf510.pdf
IRF510, SiHF510 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 100 Available Repetitive avalanche rated RDS(on) ( )VGS = 10 V 0.54 175 C operating temperature Available Qg max. (nC) 8.3 Fast switching Qgs (nC) 2.3 Ease of paralleling Qgd (nC) 3.8 Simple drive requirements Configuration Single
9.12. Size:151K infineon
irf520 sihf520.pdf
IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 16 COMPLIANT Fast Switching Qgs (nC) 4.4 Ease of Paralleling Qgd (nC) 7.7 Simple Drive Requirements Configuration Single Complia
9.13. Size:151K infineon
irf510 sihf510.pdf
IRF510, SiHF510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 8.3 Fast Switching Qgs (nC) 2.3 Ease of Paralleling Qgd (nC) 3.8 Simple Drive Requirements Configuration Single Compli
Otros transistores... SIHF22N65E, SIHF23N60E, SIHF28N60EF, SIHF30N60E, SIHF510, SIHF510S, SIHF520, SIHF520S, IRF3710, SIHF530S, SIHF540, SIHF540S, SIHF5N50D, SIHF610, SIHF610L, SIHF610S, SIHF614
