SIHF620S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHF620S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: TO-263

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SIHF620S datasheet

 ..1. Size:162K  vishay
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SIHF620S

IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt Rating Qgs (nC) 3.0 Repetitive Avalanche Rated Qgd (nC) 7.9 Fast Switching Simple Drive Requirements Configuratio

 7.1. Size:202K  vishay
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SIHF620S

IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 7.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 7.2. Size:152K  vishay
irf620 sihf620.pdf pdf_icon

SIHF620S

IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 7.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 8.1. Size:196K  vishay
irf624 sihf624.pdf pdf_icon

SIHF620S

IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 2.7 Simple Drive Requirements Qgd (nC) 7.8 Configuration Single Compliant to RoHS Directive 2002/95/EC D DE

Otros transistores... SIHF540S, SIHF5N50D, SIHF610, SIHF610L, SIHF610S, SIHF614, SIHF614S, SIHF620, AON7408, SIHF624, SIHF624S, SIHF630, SIHF630S, SIHF634, SIHF634S, SIHF640, SIHF640L