IRL520A Todos los transistores

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic-Level Gate Drive RDS(on) = 0.22 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9.2 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.176 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rating

PD- 95592 IRL520NSPbF IRL520NLPbF Lead-Free www.irf.com 1 07/21/04 IR520NS/LPbF 2 www.irf.com IRL520NS/LPbF www.irf.com 3 IR520NS/LPbF 4 www.irf.com IRL520NS/LPbF www.irf.com 5 IR520NS/LPbF 6 www.irf.com IRL520NS/LPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Cur

Document Number 90382 www.vishay.com 1325 Document Number 90382 www.vishay.com 1326 Document Number 90382 www.vishay.com 1327 Document Number 90382 www.vishay.com 1328 Document Number 90382 www.vishay.com 1329 Document Number 90382 www.vishay.com 1330 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as

PD- 95592 IRL520NSPbF IRL520NLPbF Lead-Free www.irf.com 1 07/21/04 IR520NS/LPbF 2 www.irf.com IRL520NS/LPbF www.irf.com 3 IR520NS/LPbF 4 www.irf.com IRL520NS/LPbF www.irf.com 5 IR520NS/LPbF 6 www.irf.com IRL520NS/LPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Cur

PD - 95450 IRL520PbF Lead-Free 6/22/04 Document Number 91298 www.vishay.com 1 IRL520PbF Document Number 91298 www.vishay.com 2 IRL520PbF Document Number 91298 www.vishay.com 3 IRL520PbF Document Number 91298 www.vishay.com 4 IRL520PbF Document Number 91298 www.vishay.com 5 IRL520PbF Document Number 91298 www.vishay.com 6 IRL520PbF + Circuit Layout Consider

PD - 91494A IRL520N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.18 Fast Switching G Fully Avalanche Rated ID = 10A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

PD- 95668 IRL520NPbF Lead-Free www.irf.com 1 8/2/04 IRL520NPbF 2 www.irf.com IRL520NPbF www.irf.com 3 IRL520NPbF 4 www.irf.com IRL520NPbF www.irf.com 5 IRL520NPbF 6 www.irf.com IRL520NPbF www.irf.com 7 IRL520NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139)

PD - 91534 IRL520NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 100V Surface Mount (IRL520NS) Low-profile through-hole (IRL520NL) 175 C Operating Temperature RDS(on) = 0.18 Fast Switching G Fully Avalanche Rated ID = 10A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques

IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 5 V 0.27 Dynamic dV/dt Rating Qg (Max.) (nC) 12 Repetitive Avalanche Rated Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS (on) Specified at VGS = 4 V and 5 V Configuration Single 175 C Operatin

IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.0 175 C Operating Temperature Qgd (nC) 7.1 Fast Switching Configuration Si

IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.0 175 C Operating Temperature Qgd (nC) 7.1 Fast Switching Configuration Si

IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 5 V 0.27 Dynamic dV/dt Rating Qg (Max.) (nC) 12 Repetitive Avalanche Rated Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS (on) Specified at VGS = 4 V and 5 V Configuration Single 175 C Operatin

IRL520NP www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.092 at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAX

isc N-Channel MOSFET Transistor IRL520N,IIRL520N FEATURES Low drain-source on-resistance RDS(on) 180m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is intended for general purpose switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

Isc N-Channel MOSFET Transistor IRL520NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100

Isc N-Channel MOSFET Transistor IRL520NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt