IRL520NS Todos los transistores

 

IRL520NS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRL520NS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 97 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO263

 Búsqueda de reemplazo de MOSFET IRL520NS

 

IRL520NS Datasheet (PDF)

 ..1. Size:401K  international rectifier
irl520nlpbf irl520nspbf.pdf

IRL520NS
IRL520NS

PD- 95592IRL520NSPbFIRL520NLPbF Lead-Freewww.irf.com 107/21/04IR520NS/LPbF2 www.irf.comIRL520NS/LPbFwww.irf.com 3IR520NS/LPbF4 www.irf.comIRL520NS/LPbFwww.irf.com 5IR520NS/LPbF6 www.irf.comIRL520NS/LPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCur

 ..2. Size:186K  international rectifier
irl520ns irl520nl.pdf

IRL520NS
IRL520NS

PD - 91534IRL520NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 100V Surface Mount (IRL520NS) Low-profile through-hole (IRL520NL) 175C Operating TemperatureRDS(on) = 0.18 Fast SwitchingG Fully Avalanche RatedID = 10ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques

 ..3. Size:401K  infineon
irl520nspbf irl520nlpbf.pdf

IRL520NS
IRL520NS

PD- 95592IRL520NSPbFIRL520NLPbF Lead-Freewww.irf.com 107/21/04IR520NS/LPbF2 www.irf.comIRL520NS/LPbFwww.irf.com 3IR520NS/LPbF4 www.irf.comIRL520NS/LPbFwww.irf.com 5IR520NS/LPbF6 www.irf.comIRL520NS/LPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCur

 ..4. Size:257K  inchange semiconductor
irl520ns.pdf

IRL520NS
IRL520NS

Isc N-Channel MOSFET Transistor IRL520NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 7.1. Size:134K  international rectifier
irl520n.pdf

IRL520NS
IRL520NS

PD - 91494AIRL520NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.18 Fast SwitchingG Fully Avalanche RatedID = 10ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

 7.2. Size:308K  international rectifier
irl520npbf.pdf

IRL520NS
IRL520NS

PD- 95668IRL520NPbF Lead-Freewww.irf.com 18/2/04IRL520NPbF2 www.irf.comIRL520NPbFwww.irf.com 3IRL520NPbF4 www.irf.comIRL520NPbFwww.irf.com 5IRL520NPbF6 www.irf.comIRL520NPbFwww.irf.com 7IRL520NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.139)

 7.3. Size:1424K  cn vbsemi
irl520np.pdf

IRL520NS
IRL520NS

IRL520NPwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAX

 7.4. Size:254K  inchange semiconductor
irl520n.pdf

IRL520NS
IRL520NS

isc N-Channel MOSFET Transistor IRL520N,IIRL520NFEATURESLow drain-source on-resistance:RDS(on) 180m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is intended for general purpose switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 7.5. Size:255K  inchange semiconductor
irl520nl.pdf

IRL520NS
IRL520NS

Isc N-Channel MOSFET Transistor IRL520NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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