SIHF840LCL Todos los transistores

 

SIHF840LCL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHF840LCL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 39 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: TO-262

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SIHF840LCL Datasheet (PDF)

 ..1. Size:196K  vishay
irf840lclpbf irf840lcspbf sihf840lcl sihf840lcs.pdf

SIHF840LCL
SIHF840LCL

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 500 Ultra Low Gate ChargeRDS(on) ()VGS = 10 V 0.85 Reduced Gate Drive RequirementQg (Max.) (nC) 39 Enhanced 30 V VGS Rating Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency Operatio

 5.1. Size:198K  vishay
irf840lc irf840lcpbf sihf840lc.pdf

SIHF840LCL
SIHF840LCL

IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com

 5.2. Size:197K  vishay
irf840lc sihf840lc.pdf

SIHF840LCL
SIHF840LCL

IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com

 6.1. Size:162K  vishay
irf840lpbf sihf840l.pdf

SIHF840LCL
SIHF840LCL

IRF840L, SiHF840LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.85 Repetitive Avalanche RatedQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 9.3 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to

 6.2. Size:161K  vishay
irf840l sihf840l.pdf

SIHF840LCL
SIHF840LCL

IRF840L, SiHF840LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.85 Repetitive Avalanche RatedQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 9.3 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to

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