SIHF840LCS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHF840LCS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm

Encapsulados: TO-263

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SIHF840LCS datasheet

 ..1. Size:196K  vishay
 irf840lclpbf irf840lcspbf sihf840lcl sihf840lcs.pdf pdf_icon

SIHF840LCS

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 500 Ultra Low Gate Charge RDS(on) ( )VGS = 10 V 0.85 Reduced Gate Drive Requirement Qg (Max.) (nC) 39 Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operatio

 5.1. Size:198K  vishay
 irf840lc irf840lcpbf sihf840lc.pdf pdf_icon

SIHF840LCS

IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 39 Extremely High Frequency Operation Qgs (nC) 10 Repetitive Avalanche Rated Qgd (nC) 19 Com

 5.2. Size:197K  vishay
 irf840lc sihf840lc.pdf pdf_icon

SIHF840LCS

IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 39 Extremely High Frequency Operation Qgs (nC) 10 Repetitive Avalanche Rated Qgd (nC) 19 Com

 6.1. Size:162K  vishay
 irf840lpbf sihf840l.pdf pdf_icon

SIHF840LCS

IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.85 Repetitive Avalanche Rated Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 9.3 Ease of Paralleling Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to

MOSTRAR MÁS

Otros transistores... SIHF830S, SIHF840, SIHF840A, SIHF840AL, SIHF840AS, SIHF840L, SIHF840LC, SIHF840LCL, IRFB31N20D, SIHF840S, SIHF8N50D, SIHF8N50L, SIHF9510, SIHF9510S, SIHF9520, SIHF9520S, SIHF9530