SIHF8N50D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SiHF8N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.85- Low Input Capacitance (Ciss)Qg (max.) (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4- High Body Diode RuggednessQgd (nC) 7 - Avalanche Energy Rated (UIS)

New ProductSiHF8N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560RDS(on) ()VGS = 10 V 1 100 % Avalanche TestedQg (Max.) (nC) 34 Gate Charge ImprovedQgs (nC) 7.8 Trr/Qrr ImprovedQgd (nC) 10.4Configuration Single Compliant to RoHS Directive 2002/95/ECDTO-220 FULLPAKGSSDGN-Chan

IRF820, SiHF820Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 24COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 13 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDESCR

IRF820A, SiHF820AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTQg (Max.) (nC) 17 RuggednessQgs (nC) 4.3 Fully Characterized Capacitance and Avalanche Voltageand currentQgd (nC) 8.5 Effecti

IRF840A, SiHF840AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 38COMPLIANTRuggednessQgs (nC) 9.0 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 18and CurrentConfigura

IRF840A, SiHF840AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 38COMPLIANTRuggednessQgs (nC) 9.0 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 18and CurrentConfigura

IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com

IRF830AS, IRF830AL, SiHF830AS, SiHF830ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) (Max.) ()VGS = 10 V 1.40 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 24RequirementQgs (nC) 6.3 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterize

IRF840S, SiHF840SVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 500 Available in Tape and Reel AvailableRDS(on) ()VGS = 10 V 0.85 Dynamic dV/dt RatingRoHS*Qg (Max.) (nC) 63COMPLIANT Repetitive Avalanche RatedQgs (nC) 9.3 Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Single Simple Drive Requireme

IRF820S, SiHF820SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 500 Surface MountRDS(on) ()VGS = 10 V 3.0 Available in Tape and Reel Qg (Max.) (nC) 24 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.3 Fast SwitchingQgd (nC) 13 Ease of Paralleling Simple Drive Re

IRF820S, SiHF820S, IRF820L, SiHF820Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 500 Available in tape and reel RDS(on) ()VGS = 10 V 3.0Available Dynamic dV/dt ratingQg (Max.) (nC) 24 Repetitive avalanche ratedQgs (nC) 3.3Available Fast switchingQgd (nC) 13 Ease of parallelingConfiguration Singl

IRF820AS, SiHF820AS, IRF820AL, SiHF820ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) (Max.) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 4.3RuggednessQgd (nC) 8.5 Fully Characterize

IRF840AS, SiHF840AS, IRF840AL, SiHF840ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.0RuggednessQgd (nC) 18 Fully Characterized Capa

IRF830S, SiHF830S, IRF830L, SiHF830Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 500 Available in tape and reel RDS(on) ()VGS = 10 V 1.5 Dynamic dV/dt ratingAvailableQg (Max.) (nC) 38 Repetitive avalanche ratedQgs (nC) 5.0 Fast switchingAvailableQgd (nC) 22 Ease of parallelingConfiguration Single

IRF830A, SiHF830AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.4RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24 COMPLIANTRuggednessQgs (nC) 6.3 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigurati

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 500 Ultra Low Gate ChargeRDS(on) ()VGS = 10 V 0.85 Reduced Gate Drive RequirementQg (Max.) (nC) 39 Enhanced 30 V VGS Rating Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency Operatio

IRF830A, SiHF830AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.4RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24 COMPLIANTRuggednessQgs (nC) 6.3 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigurati

IRF830, SiHF830Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.0Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDE

IRF840AS, SiHF840AS, IRF840AL, SiHF840ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.0RuggednessQgd (nC) 18 Fully Characterized Capa

IRF840S, SiHF840SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Surface MountRDS(on) ()VGS = 10 V 0.85 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.3 Repetitive Avalanche RatedQgd (nC) 32 Fast Switching Ease of ParallelingConfiguration Sin

IRF840, SiHF840Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.85RoHS* Fast SwitchingQg (Max.) (nC) 63COMPLIANT Ease of ParallelingQgs (nC) 9.3Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDE

IRF840L, SiHF840LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.85 Repetitive Avalanche RatedQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 9.3 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to

IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com

IRF830S, SiHF830S, IRF830L, SiHF830Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 500 Available in tape and reel RDS(on) ()VGS = 10 V 1.5 Dynamic dV/dt ratingAvailableQg max. (nC) 38 Repetitive avalanche ratedQgs (nC) 5.0 Fast switchingAvailableQgd (nC) 22 Ease of parallelingConfiguration Single

IRF820A, SiHF820AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTQg (Max.) (nC) 17 RuggednessQgs (nC) 4.3 Fully Characterized Capacitance and Avalanche Voltageand currentQgd (nC) 8.5 Effecti

IRF830S, SiHF830SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 500 Surface MountRDS(on) ()VGS = 10 V 1.5 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 5.0 Fast SwitchingQgd (nC) 22 Ease of Paralleling Simple Drive R

IRF820, SiHF820Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 24COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 13 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDESCR

IRF840, SiHF840Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.85RoHS* Fast SwitchingQg (Max.) (nC) 63COMPLIANT Ease of ParallelingQgs (nC) 9.3Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDE

IRF830, SiHF830Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.0Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDE

IRF840L, SiHF840LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.85 Repetitive Avalanche RatedQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 9.3 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to

IRF820, SiHF820Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 24COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 13 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDESCR