SIHF9510S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHF9510S

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 43 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 94 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO-263

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SIHF9510S datasheet

 ..1. Size:197K  vishay
 irf9510spbf sihf9510s.pdf pdf_icon

SIHF9510S

IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt Rating Qgs (nC) 2.2 Repetitive Avalanche Rated P-Channel Qgd (nC) 4.1 175 C Operating Temperature Confi

 ..2. Size:172K  vishay
 irf9510s sihf9510s.pdf pdf_icon

SIHF9510S

IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt Rating Qgs (nC) 2.2 Repetitive Avalanche Rated P-Channel Qgd (nC) 4.1 175 C Operating Temperature Confi

 6.1. Size:197K  vishay
 irf9510 sihf9510.pdf pdf_icon

SIHF9510S

IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 8.7 175 C Operating Temperature Qgs (nC) 2.2 Fast Switching Qgd (nC) 4.1 Ease of Paralleling Configuration Single Simple Drive Requi

 6.2. Size:198K  vishay
 sihf9510.pdf pdf_icon

SIHF9510S

IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 8.7 175 C Operating Temperature Qgs (nC) 2.2 Fast Switching Qgd (nC) 4.1 Ease of Paralleling Configuration Single Simple Drive Requi

MOSTRAR MÁS

Otros transistores... SIHF840L, SIHF840LC, SIHF840LCL, SIHF840LCS, SIHF840S, SIHF8N50D, SIHF8N50L, SIHF9510, IRFZ46N, SIHF9520, SIHF9520S, SIHF9530, SIHF9530S, SIHF9540, SIHF9540S, SIHF9610, SIHF9610S