SIHF9530S
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHF9530S
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 88
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 12
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 52
nS
Cossⓘ - Capacitancia
de salida: 340
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3
Ohm
Paquete / Cubierta:
TO-263
- Selección de transistores por parámetros
SIHF9530S
Datasheet (PDF)
..1. Size:171K vishay
irf9530s sihf9530s.pdf 
IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig
..2. Size:196K vishay
irf9530spbf sihf9530s.pdf
IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig
6.1. Size:202K vishay
irf9530 sihf9530.pdf
IRF9530, SiHF9530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.30 P-Channel RoHS*Qg (Max.) (nC) 38COMPLIANT 175 C Operating TemperatureQgs (nC) 6.8 Fast SwitchingQgd (nC) 21 Ease of ParallelingConfiguration Single Simple Drive Requir
6.2. Size:203K vishay
irf9530pbf sihf9530.pdf
IRF9530, SiHF9530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.30 P-Channel RoHS*Qg (Max.) (nC) 38COMPLIANT 175 C Operating TemperatureQgs (nC) 6.8 Fast SwitchingQgd (nC) 21 Ease of ParallelingConfiguration Single Simple Drive Requir
8.1. Size:197K vishay
irf9510 sihf9510.pdf
IRF9510, SiHF9510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 8.7 175 C Operating TemperatureQgs (nC) 2.2 Fast SwitchingQgd (nC) 4.1 Ease of ParallelingConfiguration Single Simple Drive Requi
8.2. Size:197K vishay
irf9510spbf sihf9510s.pdf
IRF9510S, SiHF9510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche Rated P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfi
8.3. Size:171K vishay
irf9520s sihf9520s.pdf
IRF9520S, SiHF9520SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.60 Available in Tape and Reel Qg (Max.) (nC) 18 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating Temperature Fa
8.4. Size:202K vishay
irf9520 sihf9520.pdf
IRF9520, SiHF9520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60 P-Channel RoHS*Qg (Max.) (nC) 18COMPLIANT 175 C Operating TemperatureQgs (nC) 3.0 Fast SwitchingQgd (nC) 9.0 Ease of ParallelingConfiguration Single Simple Drive Requi
8.5. Size:197K vishay
irf9540s irf9540spbf sihf9540s.pdf
IRF9540S, SiHF9540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface Mount RDS(on) ()VGS = - 10 V 0.20 Available in Tape and ReelQg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 14 P-ChannelQgd (nC) 29 175 C Operating Temperature Fast
8.6. Size:172K vishay
irf9540s sihf9540s.pdf
IRF9540S, SiHF9540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface Mount RDS(on) ()VGS = - 10 V 0.20 Available in Tape and ReelQg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 14 P-ChannelQgd (nC) 29 175 C Operating Temperature Fast
8.7. Size:198K vishay
sihf9510.pdf
IRF9510, SiHF9510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 8.7 175 C Operating TemperatureQgs (nC) 2.2 Fast SwitchingQgd (nC) 4.1 Ease of ParallelingConfiguration Single Simple Drive Requi
8.8. Size:172K vishay
irf9510s sihf9510s.pdf
IRF9510S, SiHF9510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche Rated P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfi
8.9. Size:196K vishay
irf9520s irf9520spbf sihf9520s.pdf
IRF9520S, SiHF9520SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.60 Available in Tape and Reel Qg (Max.) (nC) 18 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating Temperature Fa
8.10. Size:202K vishay
irf9540 sihf9540.pdf
IRF9540, SiHF9540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 61 175 C Operating TemperatureQgs (nC) 14 Fast SwitchingQgd (nC) 29 Ease of ParallelingConfiguration Single Simple Drive Requir
8.11. Size:203K vishay
irf9540pbf sihf9540.pdf
IRF9540, SiHF9540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 61 175 C Operating TemperatureQgs (nC) 14 Fast SwitchingQgd (nC) 29 Ease of ParallelingConfiguration Single Simple Drive Requir
8.12. Size:203K vishay
sihf9520.pdf
IRF9520, SiHF9520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60 P-Channel RoHS*Qg (Max.) (nC) 18COMPLIANT 175 C Operating TemperatureQgs (nC) 3.0 Fast SwitchingQgd (nC) 9.0 Ease of ParallelingConfiguration Single Simple Drive Requi
8.13. Size:147K infineon
irf9510 sihf9510.pdf
IRF9510, SiHF9510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 8.7 175 C Operating TemperatureQgs (nC) 2.2 Fast SwitchingQgd (nC) 4.1 Ease of ParallelingConfiguration Single Simple Drive Requi
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.
History: 2SK2931
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