SIHF9530S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHF9530S
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 88 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 52 nS
Cossⓘ - Capacitancia de salida: 340 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de SIHF9530S MOSFET
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SIHF9530S datasheet
..1. Size:171K vishay
irf9530s sihf9530s.pdf 
IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 6.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 21 175 C Operating Temperature Config
..2. Size:196K vishay
irf9530spbf sihf9530s.pdf
IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 6.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 21 175 C Operating Temperature Config
6.1. Size:202K vishay
irf9530 sihf9530.pdf
IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.30 P-Channel RoHS* Qg (Max.) (nC) 38 COMPLIANT 175 C Operating Temperature Qgs (nC) 6.8 Fast Switching Qgd (nC) 21 Ease of Paralleling Configuration Single Simple Drive Requir
6.2. Size:203K vishay
irf9530pbf sihf9530.pdf
IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.30 P-Channel RoHS* Qg (Max.) (nC) 38 COMPLIANT 175 C Operating Temperature Qgs (nC) 6.8 Fast Switching Qgd (nC) 21 Ease of Paralleling Configuration Single Simple Drive Requir
8.1. Size:197K vishay
irf9510 sihf9510.pdf
IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 8.7 175 C Operating Temperature Qgs (nC) 2.2 Fast Switching Qgd (nC) 4.1 Ease of Paralleling Configuration Single Simple Drive Requi
8.2. Size:197K vishay
irf9510spbf sihf9510s.pdf
IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt Rating Qgs (nC) 2.2 Repetitive Avalanche Rated P-Channel Qgd (nC) 4.1 175 C Operating Temperature Confi
8.3. Size:171K vishay
irf9520s sihf9520s.pdf
IRF9520S, SiHF9520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.60 Available in Tape and Reel Qg (Max.) (nC) 18 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 3.0 P-Channel Qgd (nC) 9.0 175 C Operating Temperature Fa
8.4. Size:202K vishay
irf9520 sihf9520.pdf
IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 P-Channel RoHS* Qg (Max.) (nC) 18 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.0 Fast Switching Qgd (nC) 9.0 Ease of Paralleling Configuration Single Simple Drive Requi
8.5. Size:197K vishay
irf9540s irf9540spbf sihf9540s.pdf
IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.20 Available in Tape and Reel Qg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 14 P-Channel Qgd (nC) 29 175 C Operating Temperature Fast
8.6. Size:172K vishay
irf9540s sihf9540s.pdf
IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.20 Available in Tape and Reel Qg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 14 P-Channel Qgd (nC) 29 175 C Operating Temperature Fast
8.7. Size:198K vishay
sihf9510.pdf
IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 8.7 175 C Operating Temperature Qgs (nC) 2.2 Fast Switching Qgd (nC) 4.1 Ease of Paralleling Configuration Single Simple Drive Requi
8.8. Size:172K vishay
irf9510s sihf9510s.pdf
IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt Rating Qgs (nC) 2.2 Repetitive Avalanche Rated P-Channel Qgd (nC) 4.1 175 C Operating Temperature Confi
8.9. Size:196K vishay
irf9520s irf9520spbf sihf9520s.pdf
IRF9520S, SiHF9520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.60 Available in Tape and Reel Qg (Max.) (nC) 18 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 3.0 P-Channel Qgd (nC) 9.0 175 C Operating Temperature Fa
8.10. Size:202K vishay
irf9540 sihf9540.pdf
IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.20 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 61 175 C Operating Temperature Qgs (nC) 14 Fast Switching Qgd (nC) 29 Ease of Paralleling Configuration Single Simple Drive Requir
8.11. Size:203K vishay
irf9540pbf sihf9540.pdf
IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.20 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 61 175 C Operating Temperature Qgs (nC) 14 Fast Switching Qgd (nC) 29 Ease of Paralleling Configuration Single Simple Drive Requir
8.12. Size:203K vishay
sihf9520.pdf
IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 P-Channel RoHS* Qg (Max.) (nC) 18 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.0 Fast Switching Qgd (nC) 9.0 Ease of Paralleling Configuration Single Simple Drive Requi
8.13. Size:147K infineon
irf9510 sihf9510.pdf
IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 8.7 175 C Operating Temperature Qgs (nC) 2.2 Fast Switching Qgd (nC) 4.1 Ease of Paralleling Configuration Single Simple Drive Requi
Otros transistores... SIHF840S, SIHF8N50D, SIHF8N50L, SIHF9510, SIHF9510S, SIHF9520, SIHF9520S, SIHF9530, IRFB7545, SIHF9540, SIHF9540S, SIHF9610, SIHF9610S, SIHF9620, SIHF9620S, SIHF9630, SIHF9630S
