SIHF9640L
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHF9640L
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 200
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 11
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 43
nS
Cossⓘ - Capacitancia
de salida: 370
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5
Ohm
Paquete / Cubierta:
TO-262
- Selección de transistores por parámetros
SIHF9640L
Datasheet (PDF)
..1. Size:169K vishay
irf9640s sihf9640s irf9640l sihf9640l.pdf 
IRF9640S, SiHF9640S, IRF9640L, SiHF9640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200 Definition Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 44 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 7.1 P-ChannelQgd (nC) 27 Fast Switching
..2. Size:195K vishay
irf9640spbf sihf9640l sihf9640s.pdf
IRF9640S, SiHF9640S, IRF9640L, SiHF9640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200 Definition Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 44 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 7.1 P-ChannelQgd (nC) 27 Fast Switching
6.1. Size:196K vishay
irf9640pbf sihf9640.pdf
IRF9640, SiHF9640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 44 Fast SwitchingQgs (nC) 7.1 Ease of ParallelingQgd (nC) 27 Simple Drive RequirementsConfiguration Single Compliant to RoHS Direc
6.2. Size:196K vishay
irf9640 sihf9640.pdf
IRF9640, SiHF9640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 44 Fast SwitchingQgs (nC) 7.1 Ease of ParallelingQgd (nC) 27 Simple Drive RequirementsConfiguration Single Compliant to RoHS Direc
8.1. Size:197K vishay
irf9630pbf sihf9630.pdf
IRF9630, SiHF9630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) (Max.) ()VGS = - 10 V 0.80RoHS* P-ChannelQg (Max.) (nC) 29COMPLIANT Fast SwitchingQgs (nC) 5.4 Ease of ParallelingQgd (nC) 15 Simple Drive RequirementsConfiguration Single Compliant to RoH
8.2. Size:170K vishay
irf9610s sihf9610s.pdf
IRF9610S, SiHF9610SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200Definition Surface MountRDS(on) ()VGS = - 10 V 3.0 Available in Tape and Reel Qg (Max.) (nC) 11 Dynamic dV/dt RatingQgs (nC) 7.0 P-Channel Fast SwitchingQgd (nC) 4.0 Ease of ParallelingConfiguration Single Si
8.3. Size:194K vishay
irf9620spbf sihf9620s.pdf
IRF9620S, SiHF9620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface Mount RDS(on) ()VGS = - 10 V 1.5 Available in Tape and ReelQg (Max.) (nC) 22 Dynamic dV/dt Rating P-ChannelQgs (nC) 12 Fast SwitchingQgd (nC) 10 Ease of ParallelingConfiguration Single Simp
8.4. Size:200K vishay
irf9620 sihf9620.pdf
IRF9620, SiHF9620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available P-ChannelRDS(on) ()VGS = - 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 22COMPLIANT Ease of ParallelingQgs (nC) 12Qgd (nC) 10 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECSDESCRIPTIONT
8.5. Size:191K vishay
sihf9610.pdf
IRF9610, SiHF9610Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200 P-ChannelAvailableRDS(on) ()VGS = - 10 V 3.0 Fast SwitchingRoHS*Qg (Max.) (nC) 11COMPLIANT Ease of ParallelingQgs (nC) 7.0 Simple Drive RequirementsQgd (nC) 4.0 Lead (Pb)-free AvailableConfiguration SingleDESCRIPTIONSThe Power MOS
8.6. Size:169K vishay
irf9620s sihf9620s.pdf
IRF9620S, SiHF9620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface Mount RDS(on) ()VGS = - 10 V 1.5 Available in Tape and ReelQg (Max.) (nC) 22 Dynamic dV/dt Rating P-ChannelQgs (nC) 12 Fast SwitchingQgd (nC) 10 Ease of ParallelingConfiguration Single Simp
8.7. Size:201K vishay
sihf9620.pdf
IRF9620, SiHF9620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available P-ChannelRDS(on) ()VGS = - 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 22COMPLIANT Ease of ParallelingQgs (nC) 12Qgd (nC) 10 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECSDESCRIPTIONT
8.8. Size:197K vishay
irf9630 sihf9630.pdf
IRF9630, SiHF9630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) (Max.) ()VGS = - 10 V 0.80RoHS* P-ChannelQg (Max.) (nC) 29COMPLIANT Fast SwitchingQgs (nC) 5.4 Ease of ParallelingQgd (nC) 15 Simple Drive RequirementsConfiguration Single Compliant to RoH
8.9. Size:172K vishay
irf9630spbf sihf9630s.pdf
IRF9630S, SiHF9630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface MountRDS(on) ()VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt RatingQgs (nC) 5.4 Repetitive Avalanche Rated P-ChannelQgd (nC) 15 Fast SwitchingConfiguration Single
8.10. Size:196K vishay
sihf9610s.pdf
IRF9610S, SiHF9610Swww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) - 200 Available in Tape and Reel Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 3 P-ChannelQg (Max.) (nC) 11 Fast SwitchingQgs (nC) 7 Ease of Paralleling Simple Drive RequirementsQgd (nC) 4 Material categorization: For definitions
8.11. Size:190K vishay
irf9610 sihf9610.pdf
IRF9610, SiHF9610Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200 P-ChannelAvailableRDS(on) ()VGS = - 10 V 3.0 Fast SwitchingRoHS*Qg (Max.) (nC) 11COMPLIANT Ease of ParallelingQgs (nC) 7.0 Simple Drive RequirementsQgd (nC) 4.0 Lead (Pb)-free AvailableConfiguration SingleDESCRIPTIONSThe Power MOS
8.12. Size:171K vishay
irf9630s sihf9630s.pdf
IRF9630S, SiHF9630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface MountRDS(on) ()VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt RatingQgs (nC) 5.4 Repetitive Avalanche Rated P-ChannelQgd (nC) 15 Fast SwitchingConfiguration Single
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History: FTK5N80DD
| BUK7616-55A
| CSD85312Q3E
