SIHF9Z30 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHF9Z30

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 74 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 570 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: TO-220AB

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SIHF9Z30 datasheet

 ..1. Size:256K  vishay
irf9z30 sihf9z30.pdf pdf_icon

SIHF9Z30

IRF9Z30, SiHF9Z30 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-Channel Versatility VDS (V) - 50 Compact Plastic Package RDS(on) ( )VGS = - 10 V 0.14 Fast Switching Qg (Max.) (nC) 39 Low Drive Current Qgs (nC) 10 Ease of Paralleling Excellent Temperature Stability Qgd (nC) 15 Material categorization For definitions of com

 ..2. Size:133K  vishay
sihf9z30.pdf pdf_icon

SIHF9Z30

IRF9Z30, SiHF9Z30 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-Channel Versatility VDS (V) - 50 Compact Plastic Package RDS(on) ( )VGS = - 10 V 0.14 Fast Switching Qg (Max.) (nC) 39 Low Drive Current Qgs (nC) 10 Ease of Paralleling Excellent Temperature Stability Qgd (nC) 15 Material categorization For definitions of com

 7.1. Size:168K  vishay
irf9z34s sihf9z34s irf9z34l sihf9z34l.pdf pdf_icon

SIHF9Z30

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating Temperature Qgs (nC) 9.9

 7.2. Size:197K  vishay
irf9z34 sihf9z34.pdf pdf_icon

SIHF9Z30

IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.14 P-Channel RoHS* Qg (Max.) (nC) 34 COMPLIANT 175 C Operating Temperature Qgs (nC) 9.9 Fast Switching Qgd (nC) 16 Ease of Paralleling Configuration Single Simple Drive Requireme

Otros transistores... SIHF9Z14, SIHF9Z14L, SIHF9Z14S, SIHF9Z20, SIHF9Z22, SIHF9Z24, SIHF9Z24L, SIHF9Z24S, IRFZ44, SIHF9Z34, SIHF9Z34L, SIHF9Z34S, SIHFB13N50A, SIHFB17N50L, SIHFB9N60A, SIHFB9N65A, SIHFBC20