SIHFBC20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFBC20
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 48 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.4 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET SIHFBC20
SIHFBC20 Datasheet (PDF)
irfbc20pbf sihfbc20.pdf
IRFBC20, SiHFBC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* Fast SwitchingQg (Max.) (nC) 18COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 8.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfbc20 sihfbc20.pdf
IRFBC20, SiHFBC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* Fast SwitchingQg (Max.) (nC) 18COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 8.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfbc20 sihfbc20.pdf
IRFBC20, SiHFBC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* Fast SwitchingQg (Max.) (nC) 18COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 8.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
sihfbc20l sihfbc20s.pdf
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC20S, SiHFBC20S)RDS(on) ()VGS = 10 V 4.4 Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) Available in Tape and Reel (IRFBC20, SiiHFBC20S)Qg (Max.) (nC) 18 Dynamic dV/dt RatingQgs
irfbc20s sihfbc20s irfbc20l sihfbc20l.pdf
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC20S, SiHFBC20S)RDS(on) ()VGS = 10 V 4.4 Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) Available in Tape and Reel (IRFBC20, SiiHFBC20S)Qg (Max.) (nC) 18 Dynamic dV/dt RatingQgs
irfbc30 sihfbc30.pdf
IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE
irfbc40s sihfbc40s irfbc40l sihfbc40l.pdf
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S)RDS(on) ()VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S)Qgs (nC) 8.3 Dynamic dV/dt
irfbc40as sihfbc40as.pdf
IRFBC40AS, SiHFBC40ASVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 1.2 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 10RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanche
irfbc40lc sihfbc40lc.pdf
IRFBC40LC, SiHFBC40LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 1.2 Enhanced 30 V, VGS RatingRoHS*Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche RatedConf
irfbc30apbf sihfbc30a.pdf
IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur
irfbc40aspbf sihfbc40as.pdf
IRFBC40AS, SiHFBC40ASVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 1.2 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 10RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanche
irfbc40 sihfbc40.pdf
IRFBC40, SiHFBC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Fast SwitchingQg (Max.) (nC) 60COMPLIANT Ease of ParallelingQgs (nC) 8.3Qgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
irfbc30as sihfbc30as irfbc30al sihfbc30al.pdf
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 23RequirementQgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterized Ca
irfbc40pbf sihfbc40.pdf
IRFBC40, SiHFBC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Fast SwitchingQg (Max.) (nC) 60COMPLIANT Ease of ParallelingQgs (nC) 8.3Qgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
irfbc40spbf sihfbc40l sihfbc40s.pdf
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S)RDS(on) ()VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S)Qgs (nC) 8.3 Dynamic dV/dt
irfbc40a sihfbc40a.pdf
IRFBC40A, SiHFBC40AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 42COMPLIANTRuggednessQgs (nC) 10 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfigurati
sihfbc30l sihfbc30s.pdf
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S)RDS(on) ()VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt RatingQgs
irfbc30pbf sihfbc30.pdf
IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE
irfbc30s sihfbc30s irfbc30l sihfbc30l.pdf
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S)RDS(on) ()VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt RatingQgs
sihfbc40a.pdf
IRFBC40A, SiHFBC40AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 42COMPLIANTRuggednessQgs (nC) 10 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfigurati
irfbc30a sihfbc30a.pdf
IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur
sihfbc30al sihfbc30as.pdf
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 23RequirementQgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterized Ca
irfbc40lc irfbc40lcpbf sihfbc40lc.pdf
IRFBC40LC, SiHFBC40LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 1.2 Enhanced 30 V, VGS RatingRoHS*Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche RatedConf
irfbc30 sihfbc30.pdf
IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE
irfbc40 sihfbc40.pdf
IRFBC40, SiHFBC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Fast SwitchingQg (Max.) (nC) 60COMPLIANT Ease of ParallelingQgs (nC) 8.3Qgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: DMG4N65
History: DMG4N65
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918