SIHFBC20L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFBC20L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 48 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.4 Ohm

Encapsulados: TO-262

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SIHFBC20L datasheet

 ..1. Size:291K  vishay
 sihfbc20l sihfbc20s.pdf pdf_icon

SIHFBC20L

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC20S, SiHFBC20S) RDS(on) ( )VGS = 10 V 4.4 Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) Available in Tape and Reel (IRFBC20, SiiHFBC20S) Qg (Max.) (nC) 18 Dynamic dV/dt Rating Qgs

 ..2. Size:266K  vishay
 irfbc20s sihfbc20s irfbc20l sihfbc20l.pdf pdf_icon

SIHFBC20L

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC20S, SiHFBC20S) RDS(on) ( )VGS = 10 V 4.4 Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) Available in Tape and Reel (IRFBC20, SiiHFBC20S) Qg (Max.) (nC) 18 Dynamic dV/dt Rating Qgs

 6.1. Size:1571K  vishay
 irfbc20pbf sihfbc20.pdf pdf_icon

SIHFBC20L

IRFBC20, SiHFBC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* Fast Switching Qg (Max.) (nC) 18 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 8.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 6.2. Size:1568K  vishay
 irfbc20 sihfbc20.pdf pdf_icon

SIHFBC20L

IRFBC20, SiHFBC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* Fast Switching Qg (Max.) (nC) 18 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 8.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

MOSTRAR MÁS

Otros transistores... SIHF9Z34, SIHF9Z34L, SIHF9Z34S, SIHFB13N50A, SIHFB17N50L, SIHFB9N60A, SIHFB9N65A, SIHFBC20, IRF3710, SIHFBC20S, SIHFBC30, SIHFBC30A, SIHFBC30AL, SIHFBC30AS, SIHFBC30L, SIHFBC30S, SIHFBC40