SIHFBC30A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFBC30A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 74 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 70 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
Encapsulados: TO-220AB
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SIHFBC30A datasheet
irfbc30apbf sihfbc30a.pdf
IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 2.2 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 23 COMPLIANT Ruggedness Qgs (nC) 5.4 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configur
irfbc30a sihfbc30a.pdf
IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 2.2 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 23 COMPLIANT Ruggedness Qgs (nC) 5.4 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configur
irfbc30as sihfbc30as irfbc30al sihfbc30al.pdf
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 23 Requirement Qgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterized Ca
sihfbc30al sihfbc30as.pdf
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 23 Requirement Qgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterized Ca
Otros transistores... SIHFB13N50A, SIHFB17N50L, SIHFB9N60A, SIHFB9N65A, SIHFBC20, SIHFBC20L, SIHFBC20S, SIHFBC30, IRFB4115, SIHFBC30AL, SIHFBC30AS, SIHFBC30L, SIHFBC30S, SIHFBC40, SIHFBC40A, SIHFBC40AS, SIHFBC40L
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