SIHFBC40LC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFBC40LC, SiHFBC40LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 1.2 Enhanced 30 V, VGS RatingRoHS*Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche RatedConf

IRFBC40LC, SiHFBC40LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 1.2 Enhanced 30 V, VGS RatingRoHS*Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche RatedConf

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S)RDS(on) ()VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S)Qgs (nC) 8.3 Dynamic dV/dt

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S)RDS(on) ()VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S)Qgs (nC) 8.3 Dynamic dV/dt

IRFBC40AS, SiHFBC40ASVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 1.2 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 10RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanche

IRFBC40AS, SiHFBC40ASVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 1.2 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 10RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanche

IRFBC40, SiHFBC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Fast SwitchingQg (Max.) (nC) 60COMPLIANT Ease of ParallelingQgs (nC) 8.3Qgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

IRFBC40, SiHFBC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Fast SwitchingQg (Max.) (nC) 60COMPLIANT Ease of ParallelingQgs (nC) 8.3Qgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

IRFBC40A, SiHFBC40AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 42COMPLIANTRuggednessQgs (nC) 10 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfigurati

IRFBC40A, SiHFBC40AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 42COMPLIANTRuggednessQgs (nC) 10 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfigurati

IRFBC40, SiHFBC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Fast SwitchingQg (Max.) (nC) 60COMPLIANT Ease of ParallelingQgs (nC) 8.3Qgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD