SIHFBE30S Todos los transistores

 

SIHFBE30S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHFBE30S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO-263
 

 Búsqueda de reemplazo de SIHFBE30S MOSFET

   - Selección ⓘ de transistores por parámetros

 

SIHFBE30S Datasheet (PDF)

 ..1. Size:448K  vishay
 irfbe30s sihfbe30s irfbe30l sihfbe30l.pdf pdf_icon

SIHFBE30S

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem

 ..2. Size:473K  vishay
 sihfbe30l sihfbe30s.pdf pdf_icon

SIHFBE30S

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem

 6.1. Size:1517K  vishay
 irfbe30 sihfbe30.pdf pdf_icon

SIHFBE30S

IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 6.2. Size:1520K  vishay
 sihfbe30.pdf pdf_icon

SIHFBE30S

IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

MOSTRAR MÁS

Otros transistores... SIHFBC40A , SIHFBC40AS , SIHFBC40L , SIHFBC40LC , SIHFBC40S , SIHFBE20 , SIHFBE30 , SIHFBE30L , IRLB4132 , SIHFBF20 , SIHFBF20L , SIHFBF20S , SIHFBF30 , SIHFBF30S , SIHFBG20 , SIHFBG30 , SIHFD014 .

History: PZ2806HV | PJS6801 | DHS020N04I | PHP45NQ10T | STP16NF06LFP | FDMC8321LDC | BL40N25-F

 

 
Back to Top

 


 
.