SIHFD014 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFD014

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.7 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: HVMDIP

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SIHFD014 datasheet

 ..1. Size:2019K  vishay
irfd014 sihfd014.pdf pdf_icon

SIHFD014

IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available For Automatic Insertion RDS(on) ( )VGS = 10 V 0.20 RoHS* End Stackable Qg (Max.) (nC) 11 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.1 Qgd (nC) 5.8 Fast Switching Configuration Single Ease of Paralleling Simple Drive Requireme

 ..2. Size:2021K  vishay
irfd014pbf sihfd014.pdf pdf_icon

SIHFD014

IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available For Automatic Insertion RDS(on) ( )VGS = 10 V 0.20 RoHS* End Stackable Qg (Max.) (nC) 11 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.1 Qgd (nC) 5.8 Fast Switching Configuration Single Ease of Paralleling Simple Drive Requireme

 8.1. Size:242K  vishay
irfd020 sihfd020.pdf pdf_icon

SIHFD014

IRFD020, SiHFD020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) 50 Available Compact, End Stackable RDS(on) ( )VGS = 10 V 0.10 RoHS* Fast Switching Qg (Max.) (nC) 24 COMPLIANT Ease of Paralleling Qgs (nC) 7.1 Excellent Temperature Stability Qgd (nC) 7.1 Configuration Single Compliant to RoHS Directive 2002/95/EC

 8.2. Size:1270K  vishay
irfd024pbf sihfd024.pdf pdf_icon

SIHFD014

IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available For Automatic Insertion RDS(on) ( )VGS = 10 V 0.10 RoHS* End Stackable Qg (Max.) (nC) 25 COMPLIANT 175 C Operating Temperature Qgs (nC) 5.8 Qgd (nC) 11 Fast Switching Configuration Single Ease of Paralleling Simple Drive Requiremen

Otros transistores... SIHFBE30S, SIHFBF20, SIHFBF20L, SIHFBF20S, SIHFBF30, SIHFBF30S, SIHFBG20, SIHFBG30, 13N50, SIHFD020, SIHFD024, SIHFD110, SIHFD113, SIHFD120, SIHFD210, SIHFD214, SIHFD220