IRL540A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL540A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 121 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 310 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de IRL540A MOSFET
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IRL540A datasheet
..1. Size:938K samsung
irl540a.pdf 
Advanced Power MOSFET FEATURES BVDSS = 100 V Logic-Level Gate Drive RDS(on) = 0.058 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 28 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.046 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rating
8.1. Size:1046K international rectifier
irl540npbf.pdf
PD - 94997 IRL540NPbF HEXFET Power MOSFET Lead-Free www.irf.com 1 2/10/04 IRL540NPbF 2 www.irf.com IRL540NPbF www.irf.com 3 IRL540NPbF 4 www.irf.com IRL540NPbF www.irf.com 5 IRL540NPbF 6 www.irf.com IRL540NPbF www.irf.com 7 IRL540NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4
8.2. Size:132K international rectifier
irl540n.pdf
PD - 91495A IRL540N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.044 Fast Switching G Fully Avalanche Rated ID = 36A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
8.4. Size:248K international rectifier
irl540pbf.pdf
PD - 95453 IRL540PbF Lead-Free 6/23/04 Document Number 91300 www.vishay.com 1 IRL540PbF Document Number 91300 www.vishay.com 2 IRL540PbF Document Number 91300 www.vishay.com 3 IRL540PbF Document Number 91300 www.vishay.com 4 IRL540PbF Document Number 91300 www.vishay.com 5 IRL540PbF Document Number 91300 www.vishay.com 6 IRL540PbF + Circuit Layout Consider
8.5. Size:163K international rectifier
irl540s.pdf
www.vishay.com Document Number 90386 1349 Document Number 90386 www.vishay.com 1350 Document Number 90386 www.vishay.com 1351 Document Number 90386 www.vishay.com 1352 Document Number 90386 www.vishay.com 1353 Document Number 90386 www.vishay.com 1354 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as
8.6. Size:914K international rectifier
irl540nspbf irl540nlpbf.pdf
PD- 95234 IRL540NS/LPbF Lead-Free www.irf.com 1 05/04/04 IRL540NS/LPbF 2 www.irf.com IRL540NS/LPbF www.irf.com 3 IRL540NS/LPbF 4 www.irf.com IRL540NS/LPbF www.irf.com 5 IRL540NS/LPbF 6 www.irf.com IRL540NS/LPbF www.irf.com 7 IRL540NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR
8.7. Size:182K international rectifier
irl540ns irl540nl.pdf
PD -91535 IRL540NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRL540NS) VDSS = 100V Low-profile through-hole (IRL540NL) 175 C Operating Temperature RDS(on) = 0.044 Fast Switching G Fully Avalanche Rated ID = 36A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
8.8. Size:914K international rectifier
irl540nspbf.pdf
PD- 95234 IRL540NS/LPbF Lead-Free www.irf.com 1 05/04/04 IRL540NS/LPbF 2 www.irf.com IRL540NS/LPbF www.irf.com 3 IRL540NS/LPbF 4 www.irf.com IRL540NS/LPbF www.irf.com 5 IRL540NS/LPbF 6 www.irf.com IRL540NS/LPbF www.irf.com 7 IRL540NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR
8.9. Size:296K vishay
irl540spbf sihl540s.pdf
IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Surface Mount RDS(on) ( )VGS = 5 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 64 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 9.4 Logic-Level Gate Drive Qgd (nC) 27 RDS(on) Specified at VGS = 4 V
8.10. Size:1065K vishay
irl540 sihl540.pdf
IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.077 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 64 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.4 175 C Operating Temperature Qgd (nC) 27 Fast Switching Configuration Si
8.11. Size:1068K vishay
irl540pbf sihl540.pdf
IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.077 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 64 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.4 175 C Operating Temperature Qgd (nC) 27 Fast Switching Configuration Si
8.12. Size:270K vishay
irl540s sihl540s.pdf
IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Surface Mount RDS(on) ( )VGS = 5 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 64 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 9.4 Logic-Level Gate Drive Qgd (nC) 27 RDS(on) Specified at VGS = 4 V
8.13. Size:255K inchange semiconductor
irl540n.pdf
isc N-Channel MOSFET Transistor IRL540N,IIRL540N FEATURES Low drain-source on-resistance RDS(on) 44m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is intended for general purpose switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
8.14. Size:257K inchange semiconductor
irl540ns.pdf
Isc N-Channel MOSFET Transistor IRL540NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
8.15. Size:255K inchange semiconductor
irl540nl.pdf
Isc N-Channel MOSFET Transistor IRL540NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100
Otros transistores... IRL521, IRL530, IRL530A, IRL530N, IRL530NL, IRL530NS, IRL531, IRL540, RFP50N06, IRL540N, IRL540NL, IRL540NS, IRL541, IRL5602S, IRL610, IRL610A, IRL611
