SIHFD224 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFD224

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.63 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 77 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm

Encapsulados: HVMDIP

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SIHFD224 datasheet

 ..1. Size:1238K  vishay
irfd224 sihfd224.pdf pdf_icon

SIHFD224

IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 14 End Stackable Qgs (nC) 2.7 Fast Switching Qgd (nC) 7.8 Ease of Paralleling Configuration Single Simple Drive Requirements D Co

 ..2. Size:1237K  vishay
irfd224pbf sihfd224.pdf pdf_icon

SIHFD224

IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 14 End Stackable Qgs (nC) 2.7 Fast Switching Qgd (nC) 7.8 Ease of Paralleling Configuration Single Simple Drive Requirements D Co

 7.1. Size:1890K  vishay
irfd220 sihfd220.pdf pdf_icon

SIHFD224

IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* For Automatic Insertion Qg (Max.) (nC) 14 COMPLIANT End Stackable Qgs (nC) 3.0 Fast Switching Qgd (nC) 7.9 Ease of Paralleling Configuration Single Simple Drive Requiremen

 7.2. Size:1891K  vishay
irfd220pbf sihfd220.pdf pdf_icon

SIHFD224

IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* For Automatic Insertion Qg (Max.) (nC) 14 COMPLIANT End Stackable Qgs (nC) 3.0 Fast Switching Qgd (nC) 7.9 Ease of Paralleling Configuration Single Simple Drive Requiremen

Otros transistores... SIHFD020, SIHFD024, SIHFD110, SIHFD113, SIHFD120, SIHFD210, SIHFD214, SIHFD220, NCEP15T14, SIHFD310, SIHFD320, SIHFD420, SIHFD9010, SIHFD9014, SIHFD9024, SIHFD9110, SIHFD9120