SIHFD310 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFD310
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 0.35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 9.9 nS
Cossⓘ - Capacitancia de salida: 34 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.6 Ohm
Encapsulados: HVMDIP
Búsqueda de reemplazo de SIHFD310 MOSFET
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SIHFD310 datasheet
..1. Size:1324K vishay
irfd310 sihfd310.pdf 
IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 17 End Stackable Qgs (nC) 3.4 Fast Switching Qgd (nC) 8.5 Ease of Paralleling Configuration Single Simple Drive Requirement
..2. Size:1325K vishay
irfd310pbf sihfd310.pdf
IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 17 End Stackable Qgs (nC) 3.4 Fast Switching Qgd (nC) 8.5 Ease of Paralleling Configuration Single Simple Drive Requirement
8.1. Size:1337K vishay
irfd320pbf sihfd320.pdf
IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 20 End Stackable Qgs (nC) 3.3 Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Single Simple Drive Requirements D C
8.2. Size:1335K vishay
irfd320 sihfd320.pdf
IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 20 End Stackable Qgs (nC) 3.3 Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Single Simple Drive Requirements D C
9.1. Size:2027K vishay
irfd9120 sihfd9120.pdf
IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 RoHS* For Automatic Insertion Qg (Max.) (nC) 18 COMPLIANT End Stackable Qgs (nC) 3.0 Qgd (nC) 9.0 P-Channel Configuration Single 175 C Operating Temperature Fast Switchin
9.2. Size:1751K vishay
irfd9014pbf sihfd9014.pdf
IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switchin
9.3. Size:147K vishay
irfd110 sihfd110.pdf
IRFD110, SiHFD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.3 COMPLIANT End Stackable Qgs (nC) 2.3 Qgd (nC) 3.8 175 C Operating Temperature Configuration Single Fast Switching and Ease of Parall
9.4. Size:1639K vishay
irfd9110 sihfd9110.pdf
IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.7 COMPLIANT End Stackable Qgs (nC) 2.2 P-Channel Qgd (nC) 4.1 175 C Operating Temperature Configuration Single Fast Switchin
9.5. Size:1688K vishay
irfd9024 sihfd9024.pdf
IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.28 For Automatic Insertion RoHS* Qg (Max.) (nC) 19 COMPLIANT End Stackable Qgs (nC) 5.4 P-Channel Qgd (nC) 11 Fast Switching Configuration Single 175 C Operating Temperature
9.6. Size:1702K vishay
irfd210 sihfd210.pdf
IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen
9.7. Size:1752K vishay
irfd123 sihfd123.pdf
IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par
9.8. Size:149K vishay
irfd110pbf sihfd110.pdf
IRFD110, SiHFD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.3 COMPLIANT End Stackable Qgs (nC) 2.3 Qgd (nC) 3.8 175 C Operating Temperature Configuration Single Fast Switching and Ease of Parall
9.9. Size:131K vishay
irfd9010pbf sihfd9010.pdf
IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) - 50 Compact, End Stackable Fast Switching RDS(on) ( )VGS = - 10 V 0.50 Low Drive Current Qg (Max.) (nC) 11 Easy Paralleled Qgs (nC) 3.8 Excellent Temperature Stability Qgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
9.10. Size:1178K vishay
irfdc20 sihfdc20.pdf
IRFDC20, SiHFDC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 18 End Stackable Qgs (nC) 3.0 Fast Switching Qgd (nC) 8.9 Ease of Paralleling Configuration Single Simple Drive Requirement
9.11. Size:129K vishay
sihfd9010 irfd9010.pdf
IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) - 50 Compact, End Stackable Fast Switching RDS(on) ( )VGS = - 10 V 0.50 Low Drive Current Qg (Max.) (nC) 11 Easy Paralleled Qgs (nC) 3.8 Excellent Temperature Stability Qgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
9.12. Size:2028K vishay
irfd9120pbf sihfd9120.pdf
IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 RoHS* For Automatic Insertion Qg (Max.) (nC) 18 COMPLIANT End Stackable Qgs (nC) 3.0 Qgd (nC) 9.0 P-Channel Configuration Single 175 C Operating Temperature Fast Switchin
9.13. Size:1640K vishay
irfd9110pbf sihfd9110.pdf
IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.7 COMPLIANT End Stackable Qgs (nC) 2.2 P-Channel Qgd (nC) 4.1 175 C Operating Temperature Configuration Single Fast Switchin
9.14. Size:1552K vishay
irfd9210 sihfd9210.pdf
IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 3.0 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.9 COMPLIANT End Stackable Qgs (nC) 2.1 P-Channel Qgd (nC) 3.9 Fast Switching Configuration Single Ease of Paralleling S
9.15. Size:1750K vishay
irfd9014 sihfd9014.pdf
IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switchin
9.16. Size:1260K vishay
irfd214 sihfd214.pdf
IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen
9.17. Size:1690K vishay
irfd9024pbf sihfd9024.pdf
IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.28 For Automatic Insertion RoHS* Qg (Max.) (nC) 19 COMPLIANT End Stackable Qgs (nC) 5.4 P-Channel Qgd (nC) 11 Fast Switching Configuration Single 175 C Operating Temperature
9.18. Size:1553K vishay
irfd9210pbf sihfd9210.pdf
IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 3.0 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.9 COMPLIANT End Stackable Qgs (nC) 2.1 P-Channel Qgd (nC) 3.9 Fast Switching Configuration Single Ease of Paralleling S
9.19. Size:242K vishay
irfd020 sihfd020.pdf
IRFD020, SiHFD020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) 50 Available Compact, End Stackable RDS(on) ( )VGS = 10 V 0.10 RoHS* Fast Switching Qg (Max.) (nC) 24 COMPLIANT Ease of Paralleling Qgs (nC) 7.1 Excellent Temperature Stability Qgd (nC) 7.1 Configuration Single Compliant to RoHS Directive 2002/95/EC
9.20. Size:243K vishay
irfd113pbf sihfd113.pdf
IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) 60 Compact Plastic Package RDS(on) ( )VGS = 10 V 0.8 End Stackable Qg (Max.) (nC) 7 Fast Switching Qgs (nC) 2 Qgd (nC) 7 Low Drive Current Configuration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro
9.21. Size:243K vishay
irfd113 sihfd113.pdf
IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) 60 Compact Plastic Package RDS(on) ( )VGS = 10 V 0.8 End Stackable Qg (Max.) (nC) 7 Fast Switching Qgs (nC) 2 Qgd (nC) 7 Low Drive Current Configuration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro
9.22. Size:1226K vishay
irfd420 sihfd420.pdf
IRFD420, SiHFD420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 3.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 24 COMPLIANT End Stackable Qgs (nC) 3.3 Fast Switching Qgd (nC) 13 Ease of Paralleling Configuration Single Simple Drive Requirements
9.23. Size:1238K vishay
irfd224 sihfd224.pdf
IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 14 End Stackable Qgs (nC) 2.7 Fast Switching Qgd (nC) 7.8 Ease of Paralleling Configuration Single Simple Drive Requirements D Co
9.24. Size:1828K vishay
irfd120 sihfd120.pdf
IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par
9.25. Size:1829K vishay
irfd120pbf sihfd120.pdf
IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par
9.26. Size:1270K vishay
irfd024pbf sihfd024.pdf
IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available For Automatic Insertion RDS(on) ( )VGS = 10 V 0.10 RoHS* End Stackable Qg (Max.) (nC) 25 COMPLIANT 175 C Operating Temperature Qgs (nC) 5.8 Qgd (nC) 11 Fast Switching Configuration Single Ease of Paralleling Simple Drive Requiremen
9.27. Size:1237K vishay
irfd224pbf sihfd224.pdf
IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 14 End Stackable Qgs (nC) 2.7 Fast Switching Qgd (nC) 7.8 Ease of Paralleling Configuration Single Simple Drive Requirements D Co
9.28. Size:218K vishay
irfd020 irfd020pbf sihfd020.pdf
IRFD020, SiHFD020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) 50 Available Compact, End Stackable RDS(on) ( )VGS = 10 V 0.10 RoHS* Fast Switching Qg (Max.) (nC) 24 COMPLIANT Ease of Paralleling Qgs (nC) 7.1 Excellent Temperature Stability Qgd (nC) 7.1 Configuration Single Compliant to RoHS Directive 2002/95/EC
9.29. Size:1261K vishay
irfd214pbf sihfd214.pdf
IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen
9.30. Size:2019K vishay
irfd014 sihfd014.pdf
IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available For Automatic Insertion RDS(on) ( )VGS = 10 V 0.20 RoHS* End Stackable Qg (Max.) (nC) 11 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.1 Qgd (nC) 5.8 Fast Switching Configuration Single Ease of Paralleling Simple Drive Requireme
9.31. Size:1180K vishay
irfdc20pbf sihfdc20.pdf
IRFDC20, SiHFDC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 18 End Stackable Qgs (nC) 3.0 Fast Switching Qgd (nC) 8.9 Ease of Paralleling Configuration Single Simple Drive Requirement
9.32. Size:1675K vishay
irfd9220pbf sihfd9220.pdf
IRFD9220, SiHFD9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.5 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 15 End Stackable Qgs (nC) 3.2 P-Channel Qgd (nC) 8.4 Fast Switching Configuration Single Ease of Para
9.33. Size:1228K vishay
irfd420pbf sihfd420.pdf
IRFD420, SiHFD420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 3.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 24 COMPLIANT End Stackable Qgs (nC) 3.3 Fast Switching Qgd (nC) 13 Ease of Paralleling Configuration Single Simple Drive Requirements
9.34. Size:1890K vishay
irfd220 sihfd220.pdf
IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* For Automatic Insertion Qg (Max.) (nC) 14 COMPLIANT End Stackable Qgs (nC) 3.0 Fast Switching Qgd (nC) 7.9 Ease of Paralleling Configuration Single Simple Drive Requiremen
9.35. Size:1658K vishay
irfd9220 sihfd9220.pdf
IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.5 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 15 End Stackable Qgs (nC) 3.2 P-Channel Qgd (nC) 8.4 Fast Switching Configuration Single Ease of Paralleling S
9.36. Size:1704K vishay
irfd210pbf sihfd210.pdf
IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen
9.37. Size:1891K vishay
irfd220pbf sihfd220.pdf
IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* For Automatic Insertion Qg (Max.) (nC) 14 COMPLIANT End Stackable Qgs (nC) 3.0 Fast Switching Qgd (nC) 7.9 Ease of Paralleling Configuration Single Simple Drive Requiremen
9.38. Size:1268K vishay
irfd024 sihfd024.pdf
IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available For Automatic Insertion RDS(on) ( )VGS = 10 V 0.10 RoHS* End Stackable Qg (Max.) (nC) 25 COMPLIANT 175 C Operating Temperature Qgs (nC) 5.8 Qgd (nC) 11 Fast Switching Configuration Single Ease of Paralleling Simple Drive Requiremen
9.39. Size:2021K vishay
irfd014pbf sihfd014.pdf
IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available For Automatic Insertion RDS(on) ( )VGS = 10 V 0.20 RoHS* End Stackable Qg (Max.) (nC) 11 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.1 Qgd (nC) 5.8 Fast Switching Configuration Single Ease of Paralleling Simple Drive Requireme
9.40. Size:1875K infineon
irfd9120 sihfd9120.pdf
IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 RoHS* For Automatic Insertion Qg (Max.) (nC) 18 COMPLIANT End Stackable Qgs (nC) 3.0 Qgd (nC) 9.0 P-Channel Configuration Single 175 C Operating Temperature S Fast Switc
Otros transistores... SIHFD024, SIHFD110, SIHFD113, SIHFD120, SIHFD210, SIHFD214, SIHFD220, SIHFD224, AON7506, SIHFD320, SIHFD420, SIHFD9010, SIHFD9014, SIHFD9024, SIHFD9110, SIHFD9120, SIHFD9210
