SIHFD320 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFD320
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.49 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
Paquete / Cubierta: HVMDIP
Búsqueda de reemplazo de MOSFET SIHFD320
SIHFD320 Datasheet (PDF)
irfd320pbf sihfd320.pdf
IRFD320, SiHFD320Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 20 End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive RequirementsD C
irfd320 sihfd320.pdf
IRFD320, SiHFD320Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 20 End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive RequirementsD C
irfd310 sihfd310.pdf
IRFD310, SiHFD310Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 17 End StackableQgs (nC) 3.4 Fast SwitchingQgd (nC) 8.5 Ease of ParallelingConfiguration Single Simple Drive Requirement
irfd310pbf sihfd310.pdf
IRFD310, SiHFD310Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 17 End StackableQgs (nC) 3.4 Fast SwitchingQgd (nC) 8.5 Ease of ParallelingConfiguration Single Simple Drive Requirement
irfd9120 sihfd9120.pdf
IRFD9120, SiHFD9120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* For Automatic InsertionQg (Max.) (nC) 18COMPLIANT End StackableQgs (nC) 3.0Qgd (nC) 9.0 P-ChannelConfiguration Single 175 C Operating Temperature Fast Switchin
irfd9014pbf sihfd9014.pdf
IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin
irfd110 sihfd110.pdf
IRFD110, SiHFD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 8.3COMPLIANT End StackableQgs (nC) 2.3Qgd (nC) 3.8 175 C Operating TemperatureConfiguration Single Fast Switching and Ease of Parall
irfd9110 sihfd9110.pdf
IRFD9110, SiHFD9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* For Automatic InsertionQg (Max.) (nC) 8.7 COMPLIANT End StackableQgs (nC) 2.2 P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfiguration Single Fast Switchin
irfd9024 sihfd9024.pdf
IRFD9024, SiHFD9024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 For Automatic InsertionRoHS*Qg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 Fast SwitchingConfiguration Single 175 C Operating Temperature
irfd210 sihfd210.pdf
IRFD210, SiHFD210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* For Automatic InsertionQg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
irfd123 sihfd123.pdf
IRFD123, SiHFD123Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
irfd110pbf sihfd110.pdf
IRFD110, SiHFD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 8.3COMPLIANT End StackableQgs (nC) 2.3Qgd (nC) 3.8 175 C Operating TemperatureConfiguration Single Fast Switching and Ease of Parall
irfd9010pbf sihfd9010.pdf
IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
irfdc20 sihfdc20.pdf
IRFDC20, SiHFDC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 18 End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 8.9 Ease of ParallelingConfiguration Single Simple Drive Requirement
sihfd9010 irfd9010.pdf
IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
irfd9120pbf sihfd9120.pdf
IRFD9120, SiHFD9120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* For Automatic InsertionQg (Max.) (nC) 18COMPLIANT End StackableQgs (nC) 3.0Qgd (nC) 9.0 P-ChannelConfiguration Single 175 C Operating Temperature Fast Switchin
irfd9110pbf sihfd9110.pdf
IRFD9110, SiHFD9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* For Automatic InsertionQg (Max.) (nC) 8.7 COMPLIANT End StackableQgs (nC) 2.2 P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfiguration Single Fast Switchin
irfd9210 sihfd9210.pdf
IRFD9210, SiHFD9210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 3.0RoHS* For Automatic InsertionQg (Max.) (nC) 8.9 COMPLIANT End StackableQgs (nC) 2.1 P-ChannelQgd (nC) 3.9 Fast SwitchingConfiguration Single Ease of ParallelingS
irfd9014 sihfd9014.pdf
IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin
irfd214 sihfd214.pdf
IRFD214, SiHFD214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 2.0 For Automatic InsertionRoHS*Qg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
irfd9024pbf sihfd9024.pdf
IRFD9024, SiHFD9024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 For Automatic InsertionRoHS*Qg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 Fast SwitchingConfiguration Single 175 C Operating Temperature
irfd9210pbf sihfd9210.pdf
IRFD9210, SiHFD9210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 3.0RoHS* For Automatic InsertionQg (Max.) (nC) 8.9 COMPLIANT End StackableQgs (nC) 2.1 P-ChannelQgd (nC) 3.9 Fast SwitchingConfiguration Single Ease of ParallelingS
irfd020 sihfd020.pdf
IRFD020, SiHFD020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 50Available Compact, End StackableRDS(on) ()VGS = 10 V 0.10RoHS* Fast SwitchingQg (Max.) (nC) 24 COMPLIANT Ease of ParallelingQgs (nC) 7.1 Excellent Temperature StabilityQgd (nC) 7.1Configuration Single Compliant to RoHS Directive 2002/95/EC
irfd113pbf sihfd113.pdf
IRFD113, SiHFD113www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 60 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.8 End StackableQg (Max.) (nC) 7 Fast SwitchingQgs (nC) 2Qgd (nC) 7 Low Drive CurrentConfiguration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro
irfd113 sihfd113.pdf
IRFD113, SiHFD113www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 60 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.8 End StackableQg (Max.) (nC) 7 Fast SwitchingQgs (nC) 2Qgd (nC) 7 Low Drive CurrentConfiguration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro
irfd420 sihfd420.pdf
IRFD420, SiHFD420Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 3.0 For Automatic InsertionRoHS*Qg (Max.) (nC) 24 COMPLIANT End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 13 Ease of ParallelingConfiguration Single Simple Drive Requirements
irfd224 sihfd224.pdf
IRFD224, SiHFD224Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1 RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 14 End StackableQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Co
irfd120 sihfd120.pdf
IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
irfd120pbf sihfd120.pdf
IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
irfd024pbf sihfd024.pdf
IRFD024, SiHFD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.10RoHS* End StackableQg (Max.) (nC) 25COMPLIANT 175 C Operating TemperatureQgs (nC) 5.8Qgd (nC) 11 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requiremen
irfd224pbf sihfd224.pdf
IRFD224, SiHFD224Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1 RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 14 End StackableQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Co
irfd020 irfd020pbf sihfd020.pdf
IRFD020, SiHFD020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 50Available Compact, End StackableRDS(on) ()VGS = 10 V 0.10RoHS* Fast SwitchingQg (Max.) (nC) 24 COMPLIANT Ease of ParallelingQgs (nC) 7.1 Excellent Temperature StabilityQgd (nC) 7.1Configuration Single Compliant to RoHS Directive 2002/95/EC
irfd214pbf sihfd214.pdf
IRFD214, SiHFD214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 2.0 For Automatic InsertionRoHS*Qg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
irfd014 sihfd014.pdf
IRFD014, SiHFD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.20RoHS* End StackableQg (Max.) (nC) 11COMPLIANT 175 C Operating TemperatureQgs (nC) 3.1Qgd (nC) 5.8 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requireme
irfdc20pbf sihfdc20.pdf
IRFDC20, SiHFDC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 18 End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 8.9 Ease of ParallelingConfiguration Single Simple Drive Requirement
irfd9220pbf sihfd9220.pdf
IRFD9220, SiHFD9220www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.5RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 15 End StackableQgs (nC) 3.2 P-ChannelQgd (nC) 8.4 Fast SwitchingConfiguration Single Ease of Para
irfd420pbf sihfd420.pdf
IRFD420, SiHFD420Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 3.0 For Automatic InsertionRoHS*Qg (Max.) (nC) 24 COMPLIANT End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 13 Ease of ParallelingConfiguration Single Simple Drive Requirements
irfd220 sihfd220.pdf
IRFD220, SiHFD220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* For Automatic InsertionQg (Max.) (nC) 14COMPLIANT End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 7.9 Ease of ParallelingConfiguration Single Simple Drive Requiremen
irfd9220 sihfd9220.pdf
IRFD9220, SiHFD9220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.5RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 15 End StackableQgs (nC) 3.2 P-ChannelQgd (nC) 8.4 Fast SwitchingConfiguration Single Ease of ParallelingS
irfd210pbf sihfd210.pdf
IRFD210, SiHFD210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* For Automatic InsertionQg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
irfd220pbf sihfd220.pdf
IRFD220, SiHFD220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* For Automatic InsertionQg (Max.) (nC) 14COMPLIANT End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 7.9 Ease of ParallelingConfiguration Single Simple Drive Requiremen
irfd024 sihfd024.pdf
IRFD024, SiHFD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.10RoHS* End StackableQg (Max.) (nC) 25COMPLIANT 175 C Operating TemperatureQgs (nC) 5.8Qgd (nC) 11 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requiremen
irfd014pbf sihfd014.pdf
IRFD014, SiHFD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.20RoHS* End StackableQg (Max.) (nC) 11COMPLIANT 175 C Operating TemperatureQgs (nC) 3.1Qgd (nC) 5.8 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requireme
irfd9120 sihfd9120.pdf
IRFD9120, SiHFD9120Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* For Automatic InsertionQg (Max.) (nC) 18COMPLIANT End StackableQgs (nC) 3.0Qgd (nC) 9.0 P-ChannelConfiguration Single 175 C Operating TemperatureS Fast Switc
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